Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Positive threshold voltage shift in AlGaN/GaN HEMTs with p-type NiO gate synthesized by magnetron reactive sputtering
Positive threshold voltage shift in AlGaN/GaN HEMTs with p-type NiO gate synthesized by magnetron reactive sputtering
Positive threshold voltage shift in AlGaN/GaN HEMTs with p-type NiO gate synthesized by magnetron reactive sputtering
Zhang, Tong (Autor:in) / Wang, Lei (Autor:in) / Li, Xiaobo (Autor:in) / Bu, Yuyu (Autor:in) / Pu, Taofei (Autor:in) / Wang, Ruiling (Autor:in) / Li, Liuan (Autor:in) / Ao, Jin-Ping (Autor:in)
Applied surface science ; 462 ; 799-803
01.01.2018
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.44
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