Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Outstanding memory characteristics with atomic layer deposited Ta2O5/Al2O3/TiO2/Al2O3/Ta2O5 nanocomposite structures as the charge trapping layer
Outstanding memory characteristics with atomic layer deposited Ta2O5/Al2O3/TiO2/Al2O3/Ta2O5 nanocomposite structures as the charge trapping layer
Outstanding memory characteristics with atomic layer deposited Ta2O5/Al2O3/TiO2/Al2O3/Ta2O5 nanocomposite structures as the charge trapping layer
Han, Ping (Autor:in) / Lai, Tian-Cheng (Autor:in) / Wang, Mei (Autor:in) / Zhao, Xi-Rui (Autor:in) / Cao, Yan-Qiang (Autor:in) / Wu, Di (Autor:in) / Li, Ai-Dong (Autor:in)
Applied surface science ; 467 ; 423-427
01.01.2019
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.44
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Electrical and material characterization of tantalum pentoxide (Ta2O5) charge trapping layer memory
| British Library Online Contents | 2011
| British Library Online Contents | 2002
Nanostructuring and fluorescence properties of Eu3+:LiTaO3 in Li2O–Ta2O5–SiO2–Al2O3 glass-ceramics
| British Library Online Contents | 2009
Hydrogen induced interface passivation in atomic layer deposited Al2O3 films and Al2O3/SiO2 stacks
| British Library Online Contents | 2018
Hydrogen induced interface passivation in atomic layer deposited Al2O3 films and Al2O3/SiO2 stacks
| British Library Online Contents | 2018