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    Hydrogen induced interface passivation in atomic layer deposited Al2O3 films and Al2O3/SiO2 stacks

    New search for: Li, Shizheng
    New search for: Yang, Ning
    New search for: Yuan, Xiao
    New search for: Liu, Cui
    New search for: Ye, Xiaojun
    New search for: Li, Hongbo

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    Hydrogen induced interface passivation in atomic layer deposited Al2O3 films and Al2O3/SiO2 stacks

    New search for: Li, Shizheng
    New search for: Yang, Ning
    New search for: Yuan, Xiao
    New search for: Liu, Cui
    New search for: Ye, Xiaojun
    New search for: Li, Hongbo

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Hydrogen induced interface passivation in atomic layer deposited Al2O3 films and Al2O3/SiO2 stacks

    New search for: Li, Shizheng
    New search for: Yang, Ning
    New search for: Yuan, Xiao
    New search for: Liu, Cui
    New search for: Ye, Xiaojun
    New search for: Li, Hongbo

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    Hydrogen induced interface passivation in atomic layer deposited Al2O3 films and Al2O3/SiO2 stacks

    Contributors:

    Li, Shizheng (author) / Yang, Ning (author) / Yuan, Xiao (author) / Liu, Cui (author) / Ye, Xiaojun (author) / Li, Hongbo (author)

    Published in:

    Materials science in semiconductor processing ; 83 ; 171-174

    Publication date:

    2018-01-01

    Size:

    4 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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