Transmission electron microscopy and high-resolution electron microscopy studies of structural defects induced in Si single crystals implanted by helium ions at 600 °C

Han, W.T. / Liu, H.P. / Li, B.S. | British Library Online Contents | 2018

Transmission Electron Microscopy Investigation of Defects in B-Implanted 6H-SiC

Persson, P. O. A. / Wahab, Q. / Hultman, L. et al. | British Library Online Contents | 1998

Transmission electron microscopy study of Ge implanted into SiC

Gorelik, T. / Kaiser, U. / Schubert, C. et al. | British Library Online Contents | 2002

Analytical electron microscopy of Al~2O~3 implanted with iron ions

Sklad, P. S. / McHargue, C. J. / White, C. W. et al. | British Library Online Contents | 1992

Atomic resolution transmission electron microscopy of surfaces

Chiaramonti, A. N. / Marks, L. D. | British Library Online Contents | 2005