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    Subthreshold modeling of nanoscale germanium-tin (GeSn)-on-insulator MOSFETs including quantum effects

    New search for: Paul, Jayanti
    New search for: Mondal, Chandrima
    New search for: Biswas, Abhijit

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    Subthreshold modeling of nanoscale germanium-tin (GeSn)-on-insulator MOSFETs including quantum effects

    New search for: Paul, Jayanti
    New search for: Mondal, Chandrima
    New search for: Biswas, Abhijit

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Subthreshold modeling of nanoscale germanium-tin (GeSn)-on-insulator MOSFETs including quantum effects

    New search for: Paul, Jayanti
    New search for: Mondal, Chandrima
    New search for: Biswas, Abhijit

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Similar titles

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    Document information
    Title:

    Subthreshold modeling of nanoscale germanium-tin (GeSn)-on-insulator MOSFETs including quantum effects

    Contributors:

    Paul, Jayanti (author) / Mondal, Chandrima (author) / Biswas, Abhijit (author)

    Published in:

    Materials science in semiconductor processing ; 94 ; 128-135

    Publication date:

    2019-01-01

    Size:

    8 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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