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    Flexible, multilevel, and low-operating-voltage resistive memory based on MoS2–rGO hybrid

    New search for: Wu, Liqian
    New search for: Guo, Jiajun
    New search for: Zhong, Wei
    New search for: Zhang, Wenjun
    New search for: Kang, Xin
    New search for: Chen, Wei
    New search for: Du, Youwei

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    Flexible, multilevel, and low-operating-voltage resistive memory based on MoS2–rGO hybrid

    New search for: Wu, Liqian
    New search for: Guo, Jiajun
    New search for: Zhong, Wei
    New search for: Zhang, Wenjun
    New search for: Kang, Xin
    New search for: Chen, Wei
    New search for: Du, Youwei

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Flexible, multilevel, and low-operating-voltage resistive memory based on MoS2–rGO hybrid

    New search for: Wu, Liqian
    New search for: Guo, Jiajun
    New search for: Zhong, Wei
    New search for: Zhang, Wenjun
    New search for: Kang, Xin
    New search for: Chen, Wei
    New search for: Du, Youwei

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Flexible, multilevel, and low-operating-voltage resistive memory based on MoS2–rGO hybrid

    Contributors:

    Wu, Liqian (author) / Guo, Jiajun (author) / Zhong, Wei (author) / Zhang, Wenjun (author) / Kang, Xin (author) / Chen, Wei (author) / Du, Youwei (author)

    Published in:

    Applied surface science ; 463 ; 947-952

    Publication date:

    2019-01-01

    Size:

    6 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.44

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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