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Flexible, multilevel, and low-operating-voltage resistive memory based on MoS2–rGO hybrid
Flexible, multilevel, and low-operating-voltage resistive memory based on MoS2–rGO hybrid
Flexible, multilevel, and low-operating-voltage resistive memory based on MoS2–rGO hybrid
Wu, Liqian (Autor:in) / Guo, Jiajun (Autor:in) / Zhong, Wei (Autor:in) / Zhang, Wenjun (Autor:in) / Kang, Xin (Autor:in) / Chen, Wei (Autor:in) / Du, Youwei (Autor:in)
Applied surface science ; 463 ; 947-952
01.01.2019
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.44
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