Formation of F6V2 complexes in F-implanted Ge determined by x-ray absorption near edge structure spectroscopy: Fid-Bau Portal

Formation of F6V2 complexes in F-implanted Ge determined by x-ray absorption near edge structure spectroscopy

Sanson, A. / El Mubarek, H.A.W. / Gandy, A.S. / De Salvador, D. / Napolitani, E. / Carnera, A.

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Formation of F6V2 complexes in F-implanted Ge determined by x-ray absorption near edge structure spectroscopy

Sanson, A. / El Mubarek, H.A.W. / Gandy, A.S. / De Salvador, D. / Napolitani, E. / Carnera, A.

Formation of F6V2 complexes in F-implanted Ge determined by x-ray absorption near edge structure spectroscopy

Sanson, A. / El Mubarek, H.A.W. / Gandy, A.S. / De Salvador, D. / Napolitani, E. / Carnera, A.

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Title:

Formation of F6V2 complexes in F-implanted Ge determined by x-ray absorption near edge structure spectroscopy

Contributors:

Sanson, A. (author) / El Mubarek, H.A.W. (author) / Gandy, A.S. (author) / De Salvador, D. (author) / Napolitani, E. (author) / Carnera, A. (author)

Published in:

Materials science in semiconductor processing ; 62 ; 205-208

Publication date:

2017-01-01

Size:

4 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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