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Eigenschaften Epitaxialer Siliziumschichten Auf Spinell-Einkristallen
Characteristics of epitaxial silicon layers on spinel single crystals; it is possible to deposit epitaxial silicon layers on spinel surfaces of any orientation, main imperfections of these films being growth twins; characteristic dependence of carrier mobility on doping level is explained, both, by these twins and thermally introduced stresses. (In German with English abstract) (46324)
Eigenschaften Epitaxialer Siliziumschichten Auf Spinell-Einkristallen
Characteristics of epitaxial silicon layers on spinel single crystals; it is possible to deposit epitaxial silicon layers on spinel surfaces of any orientation, main imperfections of these films being growth twins; characteristic dependence of carrier mobility on doping level is explained, both, by these twins and thermally introduced stresses. (In German with English abstract) (46324)
Eigenschaften Epitaxialer Siliziumschichten Auf Spinell-Einkristallen
Eigenschaften Epitaxialer Siliziumschichten Auf Spinell-Einkristallen
Heywang, W. (author)
1968
13 pages
Article (Journal)
Electronic Resource
German
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