A platform for research: civil engineering, architecture and urbanism
Extraction of the carrier generation and recombination lifetime from the forward characteristics of advanced diodes
Extraction of the carrier generation and recombination lifetime from the forward characteristics of advanced diodes
Extraction of the carrier generation and recombination lifetime from the forward characteristics of advanced diodes
Poyai, A. (author) / Simoen, E. (author) / Claeys, C. (author) / Gaubas, E. (author) / Huber, A. (author) / Graf, D. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 102 ; 189-192
2003-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes
British Library Online Contents | 2010
|The Role of Carrier Lifetime in Forward Bias Degradation of 4H-SiC PiN Diodes
British Library Online Contents | 2004
|Investigation of surface recombination and carrier lifetime in 4H/6H-SiC
British Library Online Contents | 1999
|Wafer Level Recombination Carrier Lifetime Measurements of 4H-SiC PiN Epitaxial Wafers
British Library Online Contents | 2009
|Investigation of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Diodes
British Library Online Contents | 2007
|