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Integrated circuit ceramic substrate material and preparation method thereof
The invention discloses an integrated circuit ceramic substrate material and a preparation method thereof. The integrated circuit ceramic substrate material comprises aluminum oxide, mullite, silicon carbide, beryllium oxide, zirconium carbide, magnesium oxide and tantalum nitride. The preparation method of the material comprises the following steps: (1) mixing the components and carrying out ball milling; (2) after the ball milling, cold pressing and molding the powder material obtained in the step (1); (3) placing the pressed and molded powder material in the step (2) in a high-temperature sintering furnace to carry out gradient temperature sintering, firstly raising the temperature of the high-temperature sintering furnace to 800-830 DEG C to sinter for 3h, raising the temperature of the high-temperature sintering furnace to 950-1000 DEG C to sinter for 3 h, raising the temperature of the high-temperature sintering furnace to 1050-1100 DEG C to sinter for 3 h, and cooling to obtain the ceramic substrate material.
Integrated circuit ceramic substrate material and preparation method thereof
The invention discloses an integrated circuit ceramic substrate material and a preparation method thereof. The integrated circuit ceramic substrate material comprises aluminum oxide, mullite, silicon carbide, beryllium oxide, zirconium carbide, magnesium oxide and tantalum nitride. The preparation method of the material comprises the following steps: (1) mixing the components and carrying out ball milling; (2) after the ball milling, cold pressing and molding the powder material obtained in the step (1); (3) placing the pressed and molded powder material in the step (2) in a high-temperature sintering furnace to carry out gradient temperature sintering, firstly raising the temperature of the high-temperature sintering furnace to 800-830 DEG C to sinter for 3h, raising the temperature of the high-temperature sintering furnace to 950-1000 DEG C to sinter for 3 h, raising the temperature of the high-temperature sintering furnace to 1050-1100 DEG C to sinter for 3 h, and cooling to obtain the ceramic substrate material.
Integrated circuit ceramic substrate material and preparation method thereof
FEI JINHUA (author)
2015-06-17
Patent
Electronic Resource
English
IPC:
C04B
Kalk
,
LIME
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