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Silicon nitride ceramic substrate for circuit and preparation method thereof
The invention relates to the field of ceramic substrates, provides a silicon nitride ceramic substrate for a circuit and a preparation method of the silicon nitride ceramic substrate, and solves the problem that a silicon nitride ceramic substrate with high dimensional precision, high toughness and high heat conductivity cannot be obtained by adopting a preparation method in the prior art. Comprising the following preparation steps: (1) preparing tape casting slurry; (2) tape casting: preparing the tape casting slurry into a tape casting biscuit belt through a tape casting machine; (3) punching and forming: punching and forming the casting biscuit belt into a biscuit sheet with a certain shape and size; (4) lamination; (5) discharging glue; (6) high-temperature air pressure sintering; wherein the dosage ratio of the alpha-Si3N4 powder to the sintering aid is (90-96): (4-10) in percentage by weight; the alpha-Si3N4 powder is prepared by adopting a self-propagating method.
本发明涉及陶瓷基片领域，提供一种电路用氮化硅陶瓷基片及其制备方法,解决采用现有技术的制备方法无法获得尺寸精度高、韧性高、热导率高的氮化硅陶瓷基板的问题；包括以下制备步骤:（1）流延浆料配制；（2）流延成型：将流延浆料通过流延机制备成流延素坯带；（3）冲切成形：将流延素坯带冲切成形为具有一定形状和尺寸的素坯片；（4）叠片；（5）排胶；（6）高温气压烧结；其中，所述α‑Si3N4粉体与助烧结剂的用量比以重量百分比计=90‑96:4‑10；所述α‑Si3N4粉体采用自蔓延法制备而成。
Silicon nitride ceramic substrate for circuit and preparation method thereof
The invention relates to the field of ceramic substrates, provides a silicon nitride ceramic substrate for a circuit and a preparation method of the silicon nitride ceramic substrate, and solves the problem that a silicon nitride ceramic substrate with high dimensional precision, high toughness and high heat conductivity cannot be obtained by adopting a preparation method in the prior art. Comprising the following preparation steps: (1) preparing tape casting slurry; (2) tape casting: preparing the tape casting slurry into a tape casting biscuit belt through a tape casting machine; (3) punching and forming: punching and forming the casting biscuit belt into a biscuit sheet with a certain shape and size; (4) lamination; (5) discharging glue; (6) high-temperature air pressure sintering; wherein the dosage ratio of the alpha-Si3N4 powder to the sintering aid is (90-96): (4-10) in percentage by weight; the alpha-Si3N4 powder is prepared by adopting a self-propagating method.
本发明涉及陶瓷基片领域，提供一种电路用氮化硅陶瓷基片及其制备方法,解决采用现有技术的制备方法无法获得尺寸精度高、韧性高、热导率高的氮化硅陶瓷基板的问题；包括以下制备步骤:（1）流延浆料配制；（2）流延成型：将流延浆料通过流延机制备成流延素坯带；（3）冲切成形：将流延素坯带冲切成形为具有一定形状和尺寸的素坯片；（4）叠片；（5）排胶；（6）高温气压烧结；其中，所述α‑Si3N4粉体与助烧结剂的用量比以重量百分比计=90‑96:4‑10；所述α‑Si3N4粉体采用自蔓延法制备而成。
Silicon nitride ceramic substrate for circuit and preparation method thereof
一种电路用氮化硅陶瓷基片及其制备方法
YANG DASHENG (author) / ZHOU HEPING (author) / SHI CHUNXI (author)
2022-06-07
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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