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High resistivity silicon carbide
The invention relates to a high resistivity silicon carbide. According to the invention, a recrystallized silicon carbide body is provided and has a resistivity of not less than about 1E5 [Omega]cm and a nitrogen content comprising nitrogen atoms bonded within the body, wherein the nitrogen content is not greater than about 200 ppm.
High resistivity silicon carbide
The invention relates to a high resistivity silicon carbide. According to the invention, a recrystallized silicon carbide body is provided and has a resistivity of not less than about 1E5 [Omega]cm and a nitrogen content comprising nitrogen atoms bonded within the body, wherein the nitrogen content is not greater than about 200 ppm.
High resistivity silicon carbide
ANDREW G HAERLE (author) / EDWARD A PERRY (author)
2015-10-28
Patent
Electronic Resource
English
IPC:
C04B
Kalk
,
LIME
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