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Sintered oxide body and sputtering target comprising said sintered oxide body
The sintered oxide body comprises indium (In), gallium (Ga), zinc (Zn), oxygen (O), and unavoidable impurities, and is characterized in that: the sintered oxide body is provided with an IGZO (111) phase comprising In, Ga and Zn at In:Ga:Zn = 1:1:1 by atom ratio and an IGZO phase containing more Zn than the IGZO (111) phase; the IGZO phase containing more Zn than the IGZO (111) phase occupies a surface area ratio of 1 to 10%, and the atom number ratio of In, Ga and Zn in the sintered oxide body is In:Ga:Zn = 1:1:(1.02 to 1.10). The objective of the present invention is to provide an IGZO sintered oxide body allowing for a reduction of oxygen concentration that is necessary during sputtering to obtain a film having a desired carrier concentration.
Sintered oxide body and sputtering target comprising said sintered oxide body
The sintered oxide body comprises indium (In), gallium (Ga), zinc (Zn), oxygen (O), and unavoidable impurities, and is characterized in that: the sintered oxide body is provided with an IGZO (111) phase comprising In, Ga and Zn at In:Ga:Zn = 1:1:1 by atom ratio and an IGZO phase containing more Zn than the IGZO (111) phase; the IGZO phase containing more Zn than the IGZO (111) phase occupies a surface area ratio of 1 to 10%, and the atom number ratio of In, Ga and Zn in the sintered oxide body is In:Ga:Zn = 1:1:(1.02 to 1.10). The objective of the present invention is to provide an IGZO sintered oxide body allowing for a reduction of oxygen concentration that is necessary during sputtering to obtain a film having a desired carrier concentration.
Sintered oxide body and sputtering target comprising said sintered oxide body
KAKUTA KOJI (author) / OSADA KOZO (author)
2015-12-30
Patent
Electronic Resource
English
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