OXIDE SINTERED BODY AND SPUTTERING TARGET COMPRISING OXIDE SINTERED BODY: Fid-Bau Portal

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OXIDE SINTERED BODY AND SPUTTERING TARGET COMPRISING OXIDE SINTERED BODY

YAMAGUCHI YOHEI / KURIHARA TOSHIYA / KAKUTA KOJI

인듐 (In), 갈륨 (Ga), 아연 (Zn), 산소 (O) 및 불가피적 불순물로 이루어지는 산화물 소결체로서, 항절 강도가 50 ㎫ 이상, 벌크 저항이 100 mΩ㎝ 이하인 것을 특징으로 하는 IGZO 소결체. DC 스퍼터링에 의한 성막시에 타깃 갈라짐이나 파티클 발생을 저감시켜, 양호한 박막을 형성할 수 있는 스퍼터링 타깃을 제공하는 것을 과제로 한다.

An IGZO sintered compact composed of indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein the IGZO sintered compact has a flexural strength of 50 MPa or more, and a bulk resistance of 100 mΩcm or less. Provided is a sputtering target capable of suppressing the target cracks and reducing the generation of particles during deposition via DC sputtering, and forming favorable thin films.

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OXIDE SINTERED BODY AND SPUTTERING TARGET COMPRISING OXIDE SINTERED BODY

YAMAGUCHI YOHEI / KURIHARA TOSHIYA / KAKUTA KOJI

인듐 (In), 갈륨 (Ga), 아연 (Zn), 산소 (O) 및 불가피적 불순물로 이루어지는 산화물 소결체로서, 항절 강도가 50 ㎫ 이상, 벌크 저항이 100 mΩ㎝ 이하인 것을 특징으로 하는 IGZO 소결체. DC 스퍼터링에 의한 성막시에 타깃 갈라짐이나 파티클 발생을 저감시켜, 양호한 박막을 형성할 수 있는 스퍼터링 타깃을 제공하는 것을 과제로 한다.

An IGZO sintered compact composed of indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein the IGZO sintered compact has a flexural strength of 50 MPa or more, and a bulk resistance of 100 mΩcm or less. Provided is a sputtering target capable of suppressing the target cracks and reducing the generation of particles during deposition via DC sputtering, and forming favorable thin films.

OXIDE SINTERED BODY AND SPUTTERING TARGET COMPRISING OXIDE SINTERED BODY

YAMAGUCHI YOHEI / KURIHARA TOSHIYA / KAKUTA KOJI

인듐 (In), 갈륨 (Ga), 아연 (Zn), 산소 (O) 및 불가피적 불순물로 이루어지는 산화물 소결체로서, 항절 강도가 50 ㎫ 이상, 벌크 저항이 100 mΩ㎝ 이하인 것을 특징으로 하는 IGZO 소결체. DC 스퍼터링에 의한 성막시에 타깃 갈라짐이나 파티클 발생을 저감시켜, 양호한 박막을 형성할 수 있는 스퍼터링 타깃을 제공하는 것을 과제로 한다.

An IGZO sintered compact composed of indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein the IGZO sintered compact has a flexural strength of 50 MPa or more, and a bulk resistance of 100 mΩcm or less. Provided is a sputtering target capable of suppressing the target cracks and reducing the generation of particles during deposition via DC sputtering, and forming favorable thin films.

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Title:

OXIDE SINTERED BODY AND SPUTTERING TARGET COMPRISING OXIDE SINTERED BODY

Additional title:

산화물 소결체 및 그 산화물 소결체로 이루어지는 스퍼터링 타깃

Contributors:

YAMAGUCHI YOHEI (author) / KURIHARA TOSHIYA (author) / KAKUTA KOJI (author)

Publication date:

2017-08-14

Type of media:

Patent

Type of material:

Electronic Resource

Language:

Korean

Classification:

IPC: C04B Kalk , LIME / C23C Beschichten metallischer Werkstoffe , COATING METALLIC MATERIAL

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