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N-type bismuth telluride-based thermoelectric material with modulation structure and preparation method thereof
The invention discloses an n-type bismuth telluride-based thermoelectric material with a modulation structure and a preparation method thereof. The material comprises mixed powder of n-type Bi<2>Te<3>and Bi<2>Te<3-x>Se mixed in an equimolar ratio, wherein x is larger than or equal to 0.1 and smaller than or equal to 0.9. The internal structure of crystal atoms of the n-type bismuth telluride-based thermoelectric material with the modulation structure is the modulation structure; the purity of Bi<2>Te<3> powder is larger than or equal to 99.99 wt%, and the particle size of the Bi<2>Te<3> powder is smaller than or equal to 500 [mu]m; and the purity of Bi<2>Te<3-x>Se powder is greater than or equal to 99.99 wt%, the particle size of the Bi<2>Te<3-x>Se powder is less than or equal to500 [mu]m, and x is greater than or equal to 0.1 and less than or equal to 0.9. The preparation method has the characteristics of simple process, short production period and high production efficiency, and the prepared n-type bismuth telluride-based thermoelectric material with the modulation structure is high in purity, low in thermal conductivity and high in electrical conductivity, has the modulation structure, and can synergistically improve a carrier concentration and carrier mobility.
本发明公开一种调制结构的n型碲化铋基热电材料及其制备方法，包括成分为n型BiTe和BiTeSe等摩尔比混合粉末，其中0.1≤x≤0.9，该调制结构的n型碲化铋基热电材料晶体原子内部结构为调制结构，BiTe粉末的纯度为≥99.99wt％，BiTe粉末的粒径≤500μm；BiTeSe粉末的纯度为≥99.99wt％，BiTeSe粉末的粒径≤500μm，其中0.1≤x≤0.9；本发明具有工艺简单、生产周期短和生产效率高的特点，所制备的调制结构的n型碲化铋基热电材料纯度高、热导率低、电导率高、具备调制结构，能协同提升载流子浓度和迁移率。
N-type bismuth telluride-based thermoelectric material with modulation structure and preparation method thereof
The invention discloses an n-type bismuth telluride-based thermoelectric material with a modulation structure and a preparation method thereof. The material comprises mixed powder of n-type Bi<2>Te<3>and Bi<2>Te<3-x>Se mixed in an equimolar ratio, wherein x is larger than or equal to 0.1 and smaller than or equal to 0.9. The internal structure of crystal atoms of the n-type bismuth telluride-based thermoelectric material with the modulation structure is the modulation structure; the purity of Bi<2>Te<3> powder is larger than or equal to 99.99 wt%, and the particle size of the Bi<2>Te<3> powder is smaller than or equal to 500 [mu]m; and the purity of Bi<2>Te<3-x>Se powder is greater than or equal to 99.99 wt%, the particle size of the Bi<2>Te<3-x>Se powder is less than or equal to500 [mu]m, and x is greater than or equal to 0.1 and less than or equal to 0.9. The preparation method has the characteristics of simple process, short production period and high production efficiency, and the prepared n-type bismuth telluride-based thermoelectric material with the modulation structure is high in purity, low in thermal conductivity and high in electrical conductivity, has the modulation structure, and can synergistically improve a carrier concentration and carrier mobility.
本发明公开一种调制结构的n型碲化铋基热电材料及其制备方法，包括成分为n型BiTe和BiTeSe等摩尔比混合粉末，其中0.1≤x≤0.9，该调制结构的n型碲化铋基热电材料晶体原子内部结构为调制结构，BiTe粉末的纯度为≥99.99wt％，BiTe粉末的粒径≤500μm；BiTeSe粉末的纯度为≥99.99wt％，BiTeSe粉末的粒径≤500μm，其中0.1≤x≤0.9；本发明具有工艺简单、生产周期短和生产效率高的特点，所制备的调制结构的n型碲化铋基热电材料纯度高、热导率低、电导率高、具备调制结构，能协同提升载流子浓度和迁移率。
N-type bismuth telluride-based thermoelectric material with modulation structure and preparation method thereof
一种调制结构的n型碲化铋基热电材料及其制备方法
LIU FENGMING (author)
2020-07-28
Patent
Electronic Resource
Chinese
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