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Connecting material for connecting silicon carbide ceramics and application method thereof
The invention discloses a method for electric field assisted connection of silicon carbide ceramic and a connecting material adopted by the method, and belongs to the field of silicon carbide ceramicmaterial. The method comprises the following steps: clamping a connecting layer between to-be-connected silicon carbide ceramic materials, and connecting the to-be-connected SiC materials together byheating a connecting interface to a connecting temperature of 1000 DEG C or above under the assistance of an external electric field; wherein the connecting layer is a high-entropy alloy sheet with the thickness smaller than 1 mm. And the connecting layer is made of a CoFeCrNiCuTix high-entropy alloy. The requirement for an external heat source is low, the connecting speed is high, the mechanicalstrength performance of the connected silicon carbide ceramic material is good, cost saving is facilitated, the industrial production difficulty is lowered, and rapid and high-quality connection is achieved.
本发明公开了一种电场辅助连接碳化硅陶瓷的方法及其采用的连接材料，属于碳化硅陶瓷材料领域，该方法为将连接层夹置在待连接碳化硅陶瓷材料之间，通过外部电场辅助加热连接界面至连接温度1000℃以上将待连接的SiC材料连接在一起；且连接层为厚度小于1mm的高熵合金片；连接层所用的材料为CoFeCrNiCuTix高熵合金。本发明对外部热源的要求较低，连接速度快，且连接后碳化硅陶瓷材料的力学强度性能较好，有利于节约成本，降低工业化生产难度，实现快速、高品质连接。
Connecting material for connecting silicon carbide ceramics and application method thereof
The invention discloses a method for electric field assisted connection of silicon carbide ceramic and a connecting material adopted by the method, and belongs to the field of silicon carbide ceramicmaterial. The method comprises the following steps: clamping a connecting layer between to-be-connected silicon carbide ceramic materials, and connecting the to-be-connected SiC materials together byheating a connecting interface to a connecting temperature of 1000 DEG C or above under the assistance of an external electric field; wherein the connecting layer is a high-entropy alloy sheet with the thickness smaller than 1 mm. And the connecting layer is made of a CoFeCrNiCuTix high-entropy alloy. The requirement for an external heat source is low, the connecting speed is high, the mechanicalstrength performance of the connected silicon carbide ceramic material is good, cost saving is facilitated, the industrial production difficulty is lowered, and rapid and high-quality connection is achieved.
本发明公开了一种电场辅助连接碳化硅陶瓷的方法及其采用的连接材料，属于碳化硅陶瓷材料领域，该方法为将连接层夹置在待连接碳化硅陶瓷材料之间，通过外部电场辅助加热连接界面至连接温度1000℃以上将待连接的SiC材料连接在一起；且连接层为厚度小于1mm的高熵合金片；连接层所用的材料为CoFeCrNiCuTix高熵合金。本发明对外部热源的要求较低，连接速度快，且连接后碳化硅陶瓷材料的力学强度性能较好，有利于节约成本，降低工业化生产难度，实现快速、高品质连接。
Connecting material for connecting silicon carbide ceramics and application method thereof
一种连接碳化硅陶瓷的连接材料及其应用方法
WANG GANG (author) / LIU YIHE (author) / WANG MIAO (author) / YANG YUNLONG (author)
2020-11-06
Patent
Electronic Resource
Chinese
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