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High-density silicon carbide ceramic as well as preparation method and application thereof
The invention belongs to the field of non-oxide ceramic materials, and discloses high-density silicon carbide ceramic as well as a preparation method and application thereof. The silicon carbide ceramic is prepared by taking polycarbosilane as a precursor and Al2O3-Re2O3 as a sintering aid, carrying out ball milling and mixing on polycarbosilane and Al2O3-Re2O3, cracking the mixture at 500-1200 DEG C in a protective atmosphere, pre-pressing the obtained silicon carbide powder, and sintering the silicon carbide powder at 1500-1700 DEG C. The density of the prepared SiC ceramic is 97% or above,the Vickers hardness is 20-30 GPa, the bending strength is 700-1200 MPa, the breaking tenacity is 6-12 MPa.m<1/2>, and the high-temperature strength at 1200 DEG C is 600-1000 MPa. According to the invention, the preparation of various large structural parts with complex structures can be realized, and the preparation cost is greatly reduced.
本发明属于非氧化物陶瓷材料领域，公开了一种高致密碳化硅陶瓷及其制备方法和应用。所述碳化硅陶瓷是以聚碳硅烷作为前驱体，以Al2O3‑Re2O3为烧结助剂，将聚碳硅烷和Al2O3‑Re2O3球磨混合后，保护气氛下，在500～1200℃裂解，所得碳化硅粉体经预压后在1500～1700℃进行烧结制得。本发明制得的SiC陶瓷的致密度为97％以上，维氏硬度为20～30GPa，抗弯强度为700～1200MPa，断裂韧性为6～12MPa·m1/2，在1200℃下高温强度为600～1000MPa。本发明可实现各种结构复杂的大型结构件的制备，大大地降低了制备成本。
High-density silicon carbide ceramic as well as preparation method and application thereof
The invention belongs to the field of non-oxide ceramic materials, and discloses high-density silicon carbide ceramic as well as a preparation method and application thereof. The silicon carbide ceramic is prepared by taking polycarbosilane as a precursor and Al2O3-Re2O3 as a sintering aid, carrying out ball milling and mixing on polycarbosilane and Al2O3-Re2O3, cracking the mixture at 500-1200 DEG C in a protective atmosphere, pre-pressing the obtained silicon carbide powder, and sintering the silicon carbide powder at 1500-1700 DEG C. The density of the prepared SiC ceramic is 97% or above,the Vickers hardness is 20-30 GPa, the bending strength is 700-1200 MPa, the breaking tenacity is 6-12 MPa.m<1/2>, and the high-temperature strength at 1200 DEG C is 600-1000 MPa. According to the invention, the preparation of various large structural parts with complex structures can be realized, and the preparation cost is greatly reduced.
本发明属于非氧化物陶瓷材料领域，公开了一种高致密碳化硅陶瓷及其制备方法和应用。所述碳化硅陶瓷是以聚碳硅烷作为前驱体，以Al2O3‑Re2O3为烧结助剂，将聚碳硅烷和Al2O3‑Re2O3球磨混合后，保护气氛下，在500～1200℃裂解，所得碳化硅粉体经预压后在1500～1700℃进行烧结制得。本发明制得的SiC陶瓷的致密度为97％以上，维氏硬度为20～30GPa，抗弯强度为700～1200MPa，断裂韧性为6～12MPa·m1/2，在1200℃下高温强度为600～1000MPa。本发明可实现各种结构复杂的大型结构件的制备，大大地降低了制备成本。
High-density silicon carbide ceramic as well as preparation method and application thereof
一种高致密度的碳化硅陶瓷及其制备方法和应用
ZHOU YUZHANG (author) / WU LIXIANG (author) / GUO WEIMING (author) / ZHU LINLIN (author) / LIN HUATAI (author)
2020-12-11
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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