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Bismuth telluride nanowire with zigzag structure and preparation method of bismuth telluride nanowire
The invention discloses a bismuth telluride nanowire with a zigzag structure and a preparation method of the bismuth telluride nanowire. A solvothermal synthesis method is adopted; tellurium oxide, polyvinylpyrrolidone and potassium hydroxide are mixed and dissolved in ethylene glycol; oxygen in an obtained solution is removed in an inert gas protection environment; the solution is heated to a certain temperature, hydrazine hydrate is added, and heat preservation is conducted for a period of time; and a mixed solution of sodium bismuthate pentahydrate and ethylene glycol is added, and at the same time, injecting a certain amount of concentrated hydrochloric acid, and performing a reaction to obtain the bismuth telluride nanowire with the zigzag structure. According to the bismuth telluridenanowire with the zigzag structure and the preparation method of the bismuth telluride nanowire of the invention, the lattice thermal conductivity of the material can be significantly reduced under the condition of maintaining high conductivity.
本发明公开一种锯齿状结构的碲化铋纳米线及其制备方法。采用溶剂热合成的方法，将氧化碲、聚乙烯吡咯烷酮和氢氧化钾混合溶于乙二醇，并在惰性气体保护环境下排除溶液中的氧气后，将溶液升至一定温度，再加入水合肼并保温一段时间。随后加入五水铋酸钠和乙二醇的混合溶液，同时注射一定量的浓盐酸，反应得到锯齿状结构碲化铋纳米线。本发明能够在保持高电导率的情况下，显著降低材料的晶格热导率。
Bismuth telluride nanowire with zigzag structure and preparation method of bismuth telluride nanowire
The invention discloses a bismuth telluride nanowire with a zigzag structure and a preparation method of the bismuth telluride nanowire. A solvothermal synthesis method is adopted; tellurium oxide, polyvinylpyrrolidone and potassium hydroxide are mixed and dissolved in ethylene glycol; oxygen in an obtained solution is removed in an inert gas protection environment; the solution is heated to a certain temperature, hydrazine hydrate is added, and heat preservation is conducted for a period of time; and a mixed solution of sodium bismuthate pentahydrate and ethylene glycol is added, and at the same time, injecting a certain amount of concentrated hydrochloric acid, and performing a reaction to obtain the bismuth telluride nanowire with the zigzag structure. According to the bismuth telluridenanowire with the zigzag structure and the preparation method of the bismuth telluride nanowire of the invention, the lattice thermal conductivity of the material can be significantly reduced under the condition of maintaining high conductivity.
本发明公开一种锯齿状结构的碲化铋纳米线及其制备方法。采用溶剂热合成的方法，将氧化碲、聚乙烯吡咯烷酮和氢氧化钾混合溶于乙二醇，并在惰性气体保护环境下排除溶液中的氧气后，将溶液升至一定温度，再加入水合肼并保温一段时间。随后加入五水铋酸钠和乙二醇的混合溶液，同时注射一定量的浓盐酸，反应得到锯齿状结构碲化铋纳米线。本发明能够在保持高电导率的情况下，显著降低材料的晶格热导率。
Bismuth telluride nanowire with zigzag structure and preparation method of bismuth telluride nanowire
一种锯齿状结构的碲化铋纳米线及其制备方法
LIU SHUAI (author) / LIU YINGGANG (author) / CHEN GUOXIANG (author)
2021-02-09
Patent
Electronic Resource
Chinese
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