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Preparation method of bismuth telluride refrigeration material and application of bismuth telluride refrigeration material in water ion generator
The invention belongs to the field of thermoelectric materials, and particularly provides a preparation method of a bismuth telluride refrigeration material and application of the bismuth telluride refrigeration material in a water ion generator, the bismuth telluride refrigeration material comprises an N-type bismuth telluride semiconductor and a P-type bismuth telluride semiconductor, the chemical composition of the N-type bismuth telluride semiconductor material is Bi2Te2. 7AsSe0. 3Sbx, and x is equal to 0.01-0.1; the chemical composition of the P-type bismuth telluride semiconductor is BiSb (3-y) CuyTe3, wherein y is equal to 0.06 to 0.10. According to the bismuth telluride refrigeration material, the N-type bismuth telluride semiconductor material and the P-type bismuth telluride semiconductor material are applied to a water ion generator by utilizing the Peltier effect, so that the refrigeration performance of the water ion generator is improved, and the application range is expanded.
本发明属于热电材料领域，具体提供一种碲化铋制冷材料的制备方法及其在水离子发生器的应用，所述碲化铋制冷材料包括N型碲化铋半导体和P型碲化铋半导体，所述N型碲化铋半导体材料的化学组成为为Bi2Te2.7AsSe0.3Sbx，其中x＝0.01‑0.1；所述P型碲化铋半导体的化学组成为BiSb3‑yCuyTe3，其中y＝0.06～0.10。所述碲化铋制冷材料利用帕尔贴效应，将所述N型碲化铋半导体材料和P型碲化铋半导体材料应用到水离子发生器中，提高水离子发生器的制冷性能，扩大应用范围。
Preparation method of bismuth telluride refrigeration material and application of bismuth telluride refrigeration material in water ion generator
The invention belongs to the field of thermoelectric materials, and particularly provides a preparation method of a bismuth telluride refrigeration material and application of the bismuth telluride refrigeration material in a water ion generator, the bismuth telluride refrigeration material comprises an N-type bismuth telluride semiconductor and a P-type bismuth telluride semiconductor, the chemical composition of the N-type bismuth telluride semiconductor material is Bi2Te2. 7AsSe0. 3Sbx, and x is equal to 0.01-0.1; the chemical composition of the P-type bismuth telluride semiconductor is BiSb (3-y) CuyTe3, wherein y is equal to 0.06 to 0.10. According to the bismuth telluride refrigeration material, the N-type bismuth telluride semiconductor material and the P-type bismuth telluride semiconductor material are applied to a water ion generator by utilizing the Peltier effect, so that the refrigeration performance of the water ion generator is improved, and the application range is expanded.
本发明属于热电材料领域，具体提供一种碲化铋制冷材料的制备方法及其在水离子发生器的应用，所述碲化铋制冷材料包括N型碲化铋半导体和P型碲化铋半导体，所述N型碲化铋半导体材料的化学组成为为Bi2Te2.7AsSe0.3Sbx，其中x＝0.01‑0.1；所述P型碲化铋半导体的化学组成为BiSb3‑yCuyTe3，其中y＝0.06～0.10。所述碲化铋制冷材料利用帕尔贴效应，将所述N型碲化铋半导体材料和P型碲化铋半导体材料应用到水离子发生器中，提高水离子发生器的制冷性能，扩大应用范围。
Preparation method of bismuth telluride refrigeration material and application of bismuth telluride refrigeration material in water ion generator
一种碲化铋制冷材料的制备方法及其在水离子发生器的应用
MA JIEFENG (author)
2022-04-29
Patent
Electronic Resource
Chinese
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