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Preparation method of silicon carbide coating graphite base
The invention discloses a preparation method of a silicon carbide coating graphite base. The method comprises the following steps: pretreating a graphite base, and putting the pretreated graphite baseon a graphite shunting disc; carrying out CVR deposition, wherein high-purity Si powder and high-purity SiO2 powder are mixed and placed in a vacuum furnace, the vacuum furnace is vacuumized, the temperature is increased to 1850-2050 DEG C in an argon atmosphere, a heat preservation reaction is conducted for 2-4 h, and a SiC matrix layer is generated on the surface of the graphite base; and carrying out CVD deposition, wherein the temperature of the vacuum furnace is reduced to 1050-1200 DEG C, then a CH3SiCl3-H2-Ar reaction gas source system is introduced, a heat preservation reaction is conducted for 10-30 h, and a SiC outer layer is formed on the SiC base body layer formed in the step S2. According t o the invention, the silicon carbide coating obtained through the preparation method is tightly combined with the graphite base, obvious layering is avoided, and the coating is high in purity and compactness, so that the thermal shock resistance of the graphite base is improved.
本发明公开一种碳化硅涂层石墨基座的制备方法，该制备方法包括以下步骤：对石墨基座进行预处理，然后置于石墨分流盘上；进行CVR沉积：将高纯Si粉末和高纯SiO2粉末混合，置于真空炉中，对真空炉进行抽真空处理并在氩气氛围中升温至1850‑2050℃，保温反应2‑4h，在石墨基座表面生成SiC基体层；进行CVD沉积：将真空炉炉温降至1050‑1200℃，然后通入CH3SiCl3‑H2‑Ar反应气源体系，保温反应10‑30h，在步骤S2所形成的SiC基体层上形成SiC外层；使用本发明的制备方法所得碳化硅涂层与石墨基座结合紧密，无明显分层以及涂层高纯、高致密，从而提高石墨基座的抗热震性能。
Preparation method of silicon carbide coating graphite base
The invention discloses a preparation method of a silicon carbide coating graphite base. The method comprises the following steps: pretreating a graphite base, and putting the pretreated graphite baseon a graphite shunting disc; carrying out CVR deposition, wherein high-purity Si powder and high-purity SiO2 powder are mixed and placed in a vacuum furnace, the vacuum furnace is vacuumized, the temperature is increased to 1850-2050 DEG C in an argon atmosphere, a heat preservation reaction is conducted for 2-4 h, and a SiC matrix layer is generated on the surface of the graphite base; and carrying out CVD deposition, wherein the temperature of the vacuum furnace is reduced to 1050-1200 DEG C, then a CH3SiCl3-H2-Ar reaction gas source system is introduced, a heat preservation reaction is conducted for 10-30 h, and a SiC outer layer is formed on the SiC base body layer formed in the step S2. According t o the invention, the silicon carbide coating obtained through the preparation method is tightly combined with the graphite base, obvious layering is avoided, and the coating is high in purity and compactness, so that the thermal shock resistance of the graphite base is improved.
本发明公开一种碳化硅涂层石墨基座的制备方法，该制备方法包括以下步骤：对石墨基座进行预处理，然后置于石墨分流盘上；进行CVR沉积：将高纯Si粉末和高纯SiO2粉末混合，置于真空炉中，对真空炉进行抽真空处理并在氩气氛围中升温至1850‑2050℃，保温反应2‑4h，在石墨基座表面生成SiC基体层；进行CVD沉积：将真空炉炉温降至1050‑1200℃，然后通入CH3SiCl3‑H2‑Ar反应气源体系，保温反应10‑30h，在步骤S2所形成的SiC基体层上形成SiC外层；使用本发明的制备方法所得碳化硅涂层与石墨基座结合紧密，无明显分层以及涂层高纯、高致密，从而提高石墨基座的抗热震性能。
Preparation method of silicon carbide coating graphite base
一种碳化硅涂层石墨基座的制备方法
DAI YU (author) / WU JIAN (author) / WANG LINJING (author) / WANG ZHUOJIAN (author)
2021-02-19
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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