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Preparation method of silicon carbide-based CVD diamond coating, and silicon carbide base
The embodiment of the invention relates to the technical field of silicon carbide ceramics, and discloses a preparation method of a silicon carbide-based CVD diamond coating, and a silicon carbide base. The method comprises the following steps: S1, substrate pretreatment: grinding, polishing, washing and drying a silicon carbide substrate; S2, acid treatment: putting the pretreated silicon carbidesubstrate into a hydrochloric acid solution for ultrasonic cleaning, taking out the silicon carbide substrate, and cleaning the silicon carbide substrate with deionized water; S3, alkali treatment: putting the silicon carbide substrate having undergone acid treatment into a sodium hydroxide solution, carrying out heating for boiling with alkali, carrying out cleaning with deionized water, and conducting drying; S4, modification with a silane coupling agent: soaking the silicon carbide substrate having undergone alkali treatment in a silane coupling agent solution for 24 hours, and then carrying out drying; and S5, preparation of the coating: putting the modified silicon carbide substrate into a chemical vapor deposition furnace, introducing H2 and CH4, and depositing the diamond coating.According to an embodiment of the invention, the film-substrate bonding performance of the silicon carbide-based diamond coating can be improved.
本发明实施例涉及碳化硅陶瓷技术领域，公开了一种碳化硅基CVD金刚石涂层的制备方法及碳化硅基。方法包括：S1、基体预处理：将碳化硅基体打磨，抛光，洗涤，烘干；S2、酸处理：将预处理后的碳化硅基体置于盐酸溶液中进行超声清洗，取出后用去离子水清洗干净；S3、碱处理：将酸处理后的碳化硅基体置于氢氧化钠溶液中，加热碱煮，然后用去离子水清洗并烘干；S4、硅烷偶联剂改性：将碱处理后的碳化硅基体浸渍在硅烷偶联剂溶液中24h，后烘干；S5、涂层的制备：将改性处理后的碳化硅基体置于化学气相沉积炉中，通入H和CH，沉积金刚石涂层。本发明实施例可以提升碳化硅基金刚石涂层的膜基结合性能。
Preparation method of silicon carbide-based CVD diamond coating, and silicon carbide base
The embodiment of the invention relates to the technical field of silicon carbide ceramics, and discloses a preparation method of a silicon carbide-based CVD diamond coating, and a silicon carbide base. The method comprises the following steps: S1, substrate pretreatment: grinding, polishing, washing and drying a silicon carbide substrate; S2, acid treatment: putting the pretreated silicon carbidesubstrate into a hydrochloric acid solution for ultrasonic cleaning, taking out the silicon carbide substrate, and cleaning the silicon carbide substrate with deionized water; S3, alkali treatment: putting the silicon carbide substrate having undergone acid treatment into a sodium hydroxide solution, carrying out heating for boiling with alkali, carrying out cleaning with deionized water, and conducting drying; S4, modification with a silane coupling agent: soaking the silicon carbide substrate having undergone alkali treatment in a silane coupling agent solution for 24 hours, and then carrying out drying; and S5, preparation of the coating: putting the modified silicon carbide substrate into a chemical vapor deposition furnace, introducing H2 and CH4, and depositing the diamond coating.According to an embodiment of the invention, the film-substrate bonding performance of the silicon carbide-based diamond coating can be improved.
本发明实施例涉及碳化硅陶瓷技术领域，公开了一种碳化硅基CVD金刚石涂层的制备方法及碳化硅基。方法包括：S1、基体预处理：将碳化硅基体打磨，抛光，洗涤，烘干；S2、酸处理：将预处理后的碳化硅基体置于盐酸溶液中进行超声清洗，取出后用去离子水清洗干净；S3、碱处理：将酸处理后的碳化硅基体置于氢氧化钠溶液中，加热碱煮，然后用去离子水清洗并烘干；S4、硅烷偶联剂改性：将碱处理后的碳化硅基体浸渍在硅烷偶联剂溶液中24h，后烘干；S5、涂层的制备：将改性处理后的碳化硅基体置于化学气相沉积炉中，通入H和CH，沉积金刚石涂层。本发明实施例可以提升碳化硅基金刚石涂层的膜基结合性能。
Preparation method of silicon carbide-based CVD diamond coating, and silicon carbide base
碳化硅基CVD金刚石涂层的制备方法及碳化硅基
HE LIWEN (author) / JIANG MENGTING (author) / OUYANG XIAOPING (author)
2020-08-07
Patent
Electronic Resource
Chinese
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