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Graphite base with embedded silicon carbide coating as well as preparation method and application of graphite base
The invention relates to a graphite base with an embedded silicon carbide coating and a preparation method and application thereof.The preparation method of the graphite base with the embedded silicon carbide coating comprises the following steps that SiO powder and the graphite base are placed in a reaction container, and the graphite base is located on a volatilization path of the SiO powder; the reaction container is vacuumized and heated to 1100-1800 DEG C, then inert gas with the flow of 100-1000 sccm is introduced into the reaction container, heat preservation is conducted, the SiO powder volatilizes to form SiO gas, the SiO gas reacts with the graphite base, and silicon carbide is formed in the graphite base and on the surface of the graphite base; and controlling the temperature of the reaction container to be 1100-1500 DEG C, introducing a diluent gas, a silicon source and a reducing gas into the reaction container, and carrying out a chemical vapor deposition reaction on the surface of the graphite base to obtain the graphite base with the embedded silicon carbide coating. The graphite base with the embedded silicon carbide coating prepared by the preparation method has excellent thermal shock resistance.
本发明涉及一种带有嵌入式碳化硅涂层的石墨基座及其制备方法与应用，该带有嵌入式碳化硅涂层的石墨基座的制备方法，包括以下步骤：将SiO粉体以及石墨基座置于反应容器中，石墨基座位于所述SiO粉体的挥发路径上；对反应容器进行抽真空处理并加热至1100℃‑1800℃，然后向反应容器中通入流量为100sccm‑1000sccm的惰性气体并保温，SiO粉体挥发形成SiO气体与石墨基座反应，在石墨基座的内部以及表面形成碳化硅；以及控制反应容器的温度在1100℃‑1500℃之间，向反应容器中通入稀释气体、硅源以及还原性气体在石墨基座的表面进行化学气相沉积反应，得到带有嵌入式碳化硅涂层的石墨基座。采用该制备方法制得的带有嵌入式碳化硅涂层的石墨基座具有优异的抗热震性能。
Graphite base with embedded silicon carbide coating as well as preparation method and application of graphite base
The invention relates to a graphite base with an embedded silicon carbide coating and a preparation method and application thereof.The preparation method of the graphite base with the embedded silicon carbide coating comprises the following steps that SiO powder and the graphite base are placed in a reaction container, and the graphite base is located on a volatilization path of the SiO powder; the reaction container is vacuumized and heated to 1100-1800 DEG C, then inert gas with the flow of 100-1000 sccm is introduced into the reaction container, heat preservation is conducted, the SiO powder volatilizes to form SiO gas, the SiO gas reacts with the graphite base, and silicon carbide is formed in the graphite base and on the surface of the graphite base; and controlling the temperature of the reaction container to be 1100-1500 DEG C, introducing a diluent gas, a silicon source and a reducing gas into the reaction container, and carrying out a chemical vapor deposition reaction on the surface of the graphite base to obtain the graphite base with the embedded silicon carbide coating. The graphite base with the embedded silicon carbide coating prepared by the preparation method has excellent thermal shock resistance.
本发明涉及一种带有嵌入式碳化硅涂层的石墨基座及其制备方法与应用，该带有嵌入式碳化硅涂层的石墨基座的制备方法，包括以下步骤：将SiO粉体以及石墨基座置于反应容器中，石墨基座位于所述SiO粉体的挥发路径上；对反应容器进行抽真空处理并加热至1100℃‑1800℃，然后向反应容器中通入流量为100sccm‑1000sccm的惰性气体并保温，SiO粉体挥发形成SiO气体与石墨基座反应，在石墨基座的内部以及表面形成碳化硅；以及控制反应容器的温度在1100℃‑1500℃之间，向反应容器中通入稀释气体、硅源以及还原性气体在石墨基座的表面进行化学气相沉积反应，得到带有嵌入式碳化硅涂层的石墨基座。采用该制备方法制得的带有嵌入式碳化硅涂层的石墨基座具有优异的抗热震性能。
Graphite base with embedded silicon carbide coating as well as preparation method and application of graphite base
带有嵌入式碳化硅涂层的石墨基座及其制备方法与应用
FU LINBING (author) / MEN YUJUAN (author) / CHUN WEIBO (author)
2024-09-24
Patent
Electronic Resource
Chinese
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