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Hot pressed sintering preparation method of tungsten oxide-based ceramic target material
The invention relates to a hot pressed sintering preparation method of a tungsten oxide-based ceramic target material, which comprises the following steps: preparing a raw material: the mixed powder comprises high-purity tungsten oxide and doping source powder, wherein the doping source is selected from at least three of Ti, Mo, V, Al, Li and Zr, the purity of the mixed powder is greater than 99.95%, the average particle size is 500nm-1800nm, and the D50 particle size is 200-750nm; when the quantitative relation of M1, M2, M3, M4 and M5 conforms to the formula, performing powder loading, pre-pressurization and degassing; performing hot pressing sintering; taking out a sintered blank after heat preservation; and performing machining or not according to needs.
本发明涉及一种氧化钨基陶瓷靶材材料的热压烧结制备方法，包括以下步骤：原料准备：混合粉体、包含高纯氧化钨和掺杂源粉体的混合粉体，掺杂源选自Ti、Mo、V、Al、Li、Zr中的至少三种，所述混合粉体的纯度大于99.95％，平均粒径500nm‑1800nm，D50粒径在200‑750nm；M1、M2、M3、M4、M5的数量关系符合公式：装粉、预加压、除气；热压烧结；保温结束取出烧坯；根据需要进行或不进行机加工。
Hot pressed sintering preparation method of tungsten oxide-based ceramic target material
The invention relates to a hot pressed sintering preparation method of a tungsten oxide-based ceramic target material, which comprises the following steps: preparing a raw material: the mixed powder comprises high-purity tungsten oxide and doping source powder, wherein the doping source is selected from at least three of Ti, Mo, V, Al, Li and Zr, the purity of the mixed powder is greater than 99.95%, the average particle size is 500nm-1800nm, and the D50 particle size is 200-750nm; when the quantitative relation of M1, M2, M3, M4 and M5 conforms to the formula, performing powder loading, pre-pressurization and degassing; performing hot pressing sintering; taking out a sintered blank after heat preservation; and performing machining or not according to needs.
本发明涉及一种氧化钨基陶瓷靶材材料的热压烧结制备方法，包括以下步骤：原料准备：混合粉体、包含高纯氧化钨和掺杂源粉体的混合粉体，掺杂源选自Ti、Mo、V、Al、Li、Zr中的至少三种，所述混合粉体的纯度大于99.95％，平均粒径500nm‑1800nm，D50粒径在200‑750nm；M1、M2、M3、M4、M5的数量关系符合公式：装粉、预加压、除气；热压烧结；保温结束取出烧坯；根据需要进行或不进行机加工。
Hot pressed sintering preparation method of tungsten oxide-based ceramic target material
一种氧化钨基陶瓷靶材材料的热压烧结制备方法
GAO MING (author) / ZHANG HU (author) / ZHANG HUARUI (author) / YANG BENRUN (author)
2021-02-12
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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