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Preparation method of doped IGZO material
The invention belongs to the technical field of target material manufacturing, and discloses a preparation method of a doped IGZO material. The preparation method comprises the following steps: (1) adding an ammonium molybdate solution into ZnO, In2O3 and Ga2O3 powder, and performing mixing, drying, sieving and heating to prepare IGZO powder; (2) adding a forming agent into the IGZO powder prepared in the step (1), performing mixing, drying, sieving and forming, removing the forming agent, and performing sintering to obtain the IGZO material, wherein the particle size of the ZnO powder, the In2O3 powder and the Ga2O3 powder is 300,800 nm. The relative density of the IGZO material prepared by the preparation method is greater than 99.6%, and the resistivity is less than 9.5 * 10 <-4> omega.cm; the IGZO film material prepared from the IGZO material is high in stability and high in quality. The preparation method is simple and easy to operate.
本发明属于靶材制造技术领域，公开了一种掺杂的IGZO材料的制备方法。该制备方法，包括以下步骤：(1)向ZnO、In2O3、Ga2O3粉末中加入钼酸铵溶液，混合，干燥，过筛，加热，制得IGZO粉体；(2)向步骤(1)制得的IGZO粉体中加入成型剂，混合，干燥，过筛，成型，脱出成型剂后烧结，即制得IGZO材料；ZnO、In2O3、Ga2O3粉末的粒径为300‑800nm。由制备方法制得的IGZO材料的相对密度大于99.6％，电阻率小于9.5×10‑4Ω·cm；由该IGZO材料制得的IGZO薄膜材料的稳定性的强，品质高。该制备方法简单，易操作。
Preparation method of doped IGZO material
The invention belongs to the technical field of target material manufacturing, and discloses a preparation method of a doped IGZO material. The preparation method comprises the following steps: (1) adding an ammonium molybdate solution into ZnO, In2O3 and Ga2O3 powder, and performing mixing, drying, sieving and heating to prepare IGZO powder; (2) adding a forming agent into the IGZO powder prepared in the step (1), performing mixing, drying, sieving and forming, removing the forming agent, and performing sintering to obtain the IGZO material, wherein the particle size of the ZnO powder, the In2O3 powder and the Ga2O3 powder is 300,800 nm. The relative density of the IGZO material prepared by the preparation method is greater than 99.6%, and the resistivity is less than 9.5 * 10 <-4> omega.cm; the IGZO film material prepared from the IGZO material is high in stability and high in quality. The preparation method is simple and easy to operate.
本发明属于靶材制造技术领域，公开了一种掺杂的IGZO材料的制备方法。该制备方法，包括以下步骤：(1)向ZnO、In2O3、Ga2O3粉末中加入钼酸铵溶液，混合，干燥，过筛，加热，制得IGZO粉体；(2)向步骤(1)制得的IGZO粉体中加入成型剂，混合，干燥，过筛，成型，脱出成型剂后烧结，即制得IGZO材料；ZnO、In2O3、Ga2O3粉末的粒径为300‑800nm。由制备方法制得的IGZO材料的相对密度大于99.6％，电阻率小于9.5×10‑4Ω·cm；由该IGZO材料制得的IGZO薄膜材料的稳定性的强，品质高。该制备方法简单，易操作。
Preparation method of doped IGZO material
一种掺杂的IGZO材料的制备方法
WANG CHEN (author) / DING JINDUO (author) / GE CHUNQIAO (author) / LIU CHUNXI (author) / JIN ZHIGUANG (author) / CUI HENG (author)
2021-03-12
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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