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Rare earth doped X-IGZO target material and preparation method thereof
The invention discloses a rare earth doped X-IGZO target material and a preparation method thereof, and belongs to the technical field of target materials. The powder components of the X-IGZO target material comprise rare earth oxide powder, indium oxide, gallium oxide and zinc oxide powder, the rare earth oxide powder is any one of lanthanum oxide, praseodymium oxide and neodymium oxide or a mixture of two of the lanthanum oxide, the praseodymium oxide and the neodymium oxide, and the mass content of the rare earth oxide powder is 1%-3% of the total mass; the mass content of gallium oxide accounts for 15% of the total mass, the mass content of zinc oxide accounts for 20% of the total mass, and the balance is indium oxide. The preparation process adopts a unique three-step process of ball-milling coarse grinding, fine grinding and nano sanding, the distribution uniformity of rare oxide powder in the whole powder can be ensured, and the uniformity of the density, resistivity and grain size of the sintered target material is ensured, so that a foundation is laid for high-performance TFT (Thin Film Transistor) capital construction of customer indexes. The fundamental problems of low IGZO mobility and poor stability can be solved.
本发明公开了一种稀土掺杂X‑IGZO靶材及其制备方法，属于靶材技术领域。所述X‑IGZO靶材的粉体成分包括稀土氧化物粉末、氧化铟、氧化镓、氧化锌粉末，所述的稀土氧化物粉末为氧化镧、氧化镨、氧化钕任何之一或者其中两种混合物，所述稀土氧化物粉末的质量含量为总质量1％‑3％；所述氧化镓质量含量为总质量15％，所述氧化锌质量含量为总质量20％，余量为氧化铟。制备工艺采取独特的球磨粗磨+精磨+纳米砂磨三步法工艺，可以确保稀有氧化物粉末在整个粉体中分布的均匀性，确保了烧结后的靶材密度、电阻率、晶粒尺寸的均匀性，从而为客户指标发出高性能的TFT基建打下了基础。可以解决IGZO迁移率低、稳定性差的根本性问题。
Rare earth doped X-IGZO target material and preparation method thereof
The invention discloses a rare earth doped X-IGZO target material and a preparation method thereof, and belongs to the technical field of target materials. The powder components of the X-IGZO target material comprise rare earth oxide powder, indium oxide, gallium oxide and zinc oxide powder, the rare earth oxide powder is any one of lanthanum oxide, praseodymium oxide and neodymium oxide or a mixture of two of the lanthanum oxide, the praseodymium oxide and the neodymium oxide, and the mass content of the rare earth oxide powder is 1%-3% of the total mass; the mass content of gallium oxide accounts for 15% of the total mass, the mass content of zinc oxide accounts for 20% of the total mass, and the balance is indium oxide. The preparation process adopts a unique three-step process of ball-milling coarse grinding, fine grinding and nano sanding, the distribution uniformity of rare oxide powder in the whole powder can be ensured, and the uniformity of the density, resistivity and grain size of the sintered target material is ensured, so that a foundation is laid for high-performance TFT (Thin Film Transistor) capital construction of customer indexes. The fundamental problems of low IGZO mobility and poor stability can be solved.
本发明公开了一种稀土掺杂X‑IGZO靶材及其制备方法，属于靶材技术领域。所述X‑IGZO靶材的粉体成分包括稀土氧化物粉末、氧化铟、氧化镓、氧化锌粉末，所述的稀土氧化物粉末为氧化镧、氧化镨、氧化钕任何之一或者其中两种混合物，所述稀土氧化物粉末的质量含量为总质量1％‑3％；所述氧化镓质量含量为总质量15％，所述氧化锌质量含量为总质量20％，余量为氧化铟。制备工艺采取独特的球磨粗磨+精磨+纳米砂磨三步法工艺，可以确保稀有氧化物粉末在整个粉体中分布的均匀性，确保了烧结后的靶材密度、电阻率、晶粒尺寸的均匀性，从而为客户指标发出高性能的TFT基建打下了基础。可以解决IGZO迁移率低、稳定性差的根本性问题。
Rare earth doped X-IGZO target material and preparation method thereof
一种稀土掺杂X-IGZO靶材及其制备方法
WANG ZHIQIANG (author) / ZHANG BING (author) / ZENG DUNFENG (author) / MA JIANBAO (author) / TAO CHENG (author)
2023-03-07
Patent
Electronic Resource
Chinese
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