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MEMBER FOR PLASMA PROCESSING DEVICE AND PLASMA PROCESSING DEVICE PROVIDED WITH SAME
Provided are: a member which is used for a plasma processing device and has an excellent plasma-resistance and improved adhesion strength to a substrate of a film; and a plasma processing device provided with the same. The member (1) for the plasma processing device is provided with: a substrate (2) containing a first element which is a metal element or a semi-metal element; a film (3) located on the substrate (2) and having, as a main component, an oxide, a fluoride, or an acid fluoride of a rare earth element; an amorphous part (4) which is interposed between the substrate (2) and the film (3) and contains at least one among the first element, yttrium, oxygen, and fluorine.
本发明提供一种等离子体处理装置用构件和具备它的等离子体处理装置，其耐等离子体性优异，膜对于基材的密接强度得到提高。等离子体处理装置用构件(1)具备如下而成：含有作为金属元素或半金属元素的第一元素的基材(2)；位于基材(2)之上的以稀土元素的氧化物、氟化物或氟氧化物为主成分的膜(3)；介于基材(2)和膜(3)之间，含有第一元素、钇、以及氧和氟中的至少任意一种的非晶质部(4)。
MEMBER FOR PLASMA PROCESSING DEVICE AND PLASMA PROCESSING DEVICE PROVIDED WITH SAME
Provided are: a member which is used for a plasma processing device and has an excellent plasma-resistance and improved adhesion strength to a substrate of a film; and a plasma processing device provided with the same. The member (1) for the plasma processing device is provided with: a substrate (2) containing a first element which is a metal element or a semi-metal element; a film (3) located on the substrate (2) and having, as a main component, an oxide, a fluoride, or an acid fluoride of a rare earth element; an amorphous part (4) which is interposed between the substrate (2) and the film (3) and contains at least one among the first element, yttrium, oxygen, and fluorine.
本发明提供一种等离子体处理装置用构件和具备它的等离子体处理装置，其耐等离子体性优异，膜对于基材的密接强度得到提高。等离子体处理装置用构件(1)具备如下而成：含有作为金属元素或半金属元素的第一元素的基材(2)；位于基材(2)之上的以稀土元素的氧化物、氟化物或氟氧化物为主成分的膜(3)；介于基材(2)和膜(3)之间，含有第一元素、钇、以及氧和氟中的至少任意一种的非晶质部(4)。
MEMBER FOR PLASMA PROCESSING DEVICE AND PLASMA PROCESSING DEVICE PROVIDED WITH SAME
等离子体处理装置用构件和具备它的等离子体处理装置
ISHIKAWA KAZUHIRO (author) / HINO TAKASHI (author) / SAITO SHUICHI (author)
2021-08-13
Patent
Electronic Resource
Chinese
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