A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
MEMBER FOR USE IN PLASMA PROCESSING DEVICE, AND PLASMA PROCESSING DEVICE PROVIDED THEREWITH
A member for use in a plasma processing device of the disclosure includes a base material, and a film of an oxide of a rare earth element on at least a part of the base material. A coefficient of variation of thickness of the film is 0.04 or less. A plasma processing device of the disclosure includes the member for use in a plasma processing device. In the member for use in a plasma processing device according to the disclosure, variation in film thickness is small.
MEMBER FOR USE IN PLASMA PROCESSING DEVICE, AND PLASMA PROCESSING DEVICE PROVIDED THEREWITH
A member for use in a plasma processing device of the disclosure includes a base material, and a film of an oxide of a rare earth element on at least a part of the base material. A coefficient of variation of thickness of the film is 0.04 or less. A plasma processing device of the disclosure includes the member for use in a plasma processing device. In the member for use in a plasma processing device according to the disclosure, variation in film thickness is small.
MEMBER FOR USE IN PLASMA PROCESSING DEVICE, AND PLASMA PROCESSING DEVICE PROVIDED THEREWITH
ISHIKAWA KAZUHIRO (author) / HINO TAKASHI (author) / SAITO SHUICHI (author)
2020-12-24
Patent
Electronic Resource
English
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