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High-temperature-resistant radiation-resistant piezoelectric ceramic and preparation method thereof
The invention discloses a high-temperature-resistant radiation-resistant piezoelectric ceramic. The chemical general formula of the high-temperature-resistant and radiation-resistant piezoelectric ceramic is (NaBi) 1-x (LiM1/2N1/2) xBi2Nb2O9 + yBi2O3, and 0 < x < 0.1; 0 wt.% < y < 5 wt.%; M and N are one of La, Ce, Pr, Nd, Y and Sm, and M and N are different elements. The preparation method mainly comprises the steps of powder preparation, dry pressing, sintering, machining, surface metallization, high-temperature aging and the like. The piezoelectric property of the ceramic is stabilized at 21-24 pC/N after the ceramic is aged at the high temperature of 600 DEG C for 48 hours, the resistivity is greater than 106 omega * cm at the high temperature of 600 DEG C, and the ceramic can be used in a high-temperature environment of 538 DEG C (1000 DEG F) for a long time and a high-temperature environment of 593 DEG C (1100 DEG F) for a short time. In addition, the performance of the piezoelectric ceramic is basically kept unchanged when the Co gamma-ray irradiation cumulative total amount is 3 * 10 < 8 > rad, and the piezoelectric ceramic can be used in an irradiation environment.
本发明公开了一种耐高温耐辐照压电陶瓷，其化学通式为(NaBi)1‑x(LiM1/2N1/2)xBi2Nb2O9+yBi2O3，其中0
High-temperature-resistant radiation-resistant piezoelectric ceramic and preparation method thereof
The invention discloses a high-temperature-resistant radiation-resistant piezoelectric ceramic. The chemical general formula of the high-temperature-resistant and radiation-resistant piezoelectric ceramic is (NaBi) 1-x (LiM1/2N1/2) xBi2Nb2O9 + yBi2O3, and 0 < x < 0.1; 0 wt.% < y < 5 wt.%; M and N are one of La, Ce, Pr, Nd, Y and Sm, and M and N are different elements. The preparation method mainly comprises the steps of powder preparation, dry pressing, sintering, machining, surface metallization, high-temperature aging and the like. The piezoelectric property of the ceramic is stabilized at 21-24 pC/N after the ceramic is aged at the high temperature of 600 DEG C for 48 hours, the resistivity is greater than 106 omega * cm at the high temperature of 600 DEG C, and the ceramic can be used in a high-temperature environment of 538 DEG C (1000 DEG F) for a long time and a high-temperature environment of 593 DEG C (1100 DEG F) for a short time. In addition, the performance of the piezoelectric ceramic is basically kept unchanged when the Co gamma-ray irradiation cumulative total amount is 3 * 10 < 8 > rad, and the piezoelectric ceramic can be used in an irradiation environment.
本发明公开了一种耐高温耐辐照压电陶瓷，其化学通式为(NaBi)1‑x(LiM1/2N1/2)xBi2Nb2O9+yBi2O3，其中0
High-temperature-resistant radiation-resistant piezoelectric ceramic and preparation method thereof
一种耐高温耐辐照压电陶瓷及其制备方法
GONG WEN (author) / TAN XIANGHU (author) / GENG JINFENG (author) / CUI JIANYE (author) / NIE JINGKAI (author) / SHI CHANGMING (author) / WANG BIN (author) / ZHANG SONGYANG (author) / HE QIANG (author) / BI LIPENG (author)
2021-09-10
Patent
Electronic Resource
Chinese
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