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Preparation method of ITO sputtering target material
The invention provides a preparation method of an ITO (Indium Tin Oxide) sputtering target material, which comprises the following steps of: carrying out wet ball-milling mixing on In2O3 powder and SnO2 powder with the purity of 99.995% at a mass ratio of (90-97): (10-3), and adding a small amount of dispersing agent and binding agent in the ball-milling process to obtain ITO slurry with high solid content and high flowing property; injecting the obtained ITO slurry into a plaster mold, and carrying out powder slurry casting molding to obtain a large-size ITO biscuit; drying and demolding the ITO biscuit, and degreasing at low temperature to remove the organic additives; and carrying out hot isostatic pressing sintering on the degreased ITO biscuit to obtain the ITO sputtering target material. The method can be used for preparing a large-size and high-density ITO target material, the sintering temperature and the sintering time of the target material can be reduced through hot isostatic pressing sintering in the process, the production efficiency is effectively improved, and the method is suitable for industrial production.
本发明提供了一种ITO溅射靶材的制备方法，包括以下步骤：将纯度为99.995%的In2O3粉体和SnO2粉体按质量比为(90～97):(10～3)进行湿法球磨混合，球磨过程加入少量分散剂和粘结剂，得到高固含量、高流动性能的ITO浆料；将所得的ITO浆料注入石膏模具中进行粉浆浇注成型，得到大尺寸ITO素坯；ITO素坯干燥脱模进行低温脱脂去除有机添加剂；将脱脂后的ITO素坯进行热等静压烧结制备ITO溅射靶材。本发明可用于大尺寸、高致密度ITO靶材的制备，且发明工艺中的热等静压烧结可以降低靶材的烧结温度和烧结时间，有效地提高生产效率，该方法适用于工业化生产。
Preparation method of ITO sputtering target material
The invention provides a preparation method of an ITO (Indium Tin Oxide) sputtering target material, which comprises the following steps of: carrying out wet ball-milling mixing on In2O3 powder and SnO2 powder with the purity of 99.995% at a mass ratio of (90-97): (10-3), and adding a small amount of dispersing agent and binding agent in the ball-milling process to obtain ITO slurry with high solid content and high flowing property; injecting the obtained ITO slurry into a plaster mold, and carrying out powder slurry casting molding to obtain a large-size ITO biscuit; drying and demolding the ITO biscuit, and degreasing at low temperature to remove the organic additives; and carrying out hot isostatic pressing sintering on the degreased ITO biscuit to obtain the ITO sputtering target material. The method can be used for preparing a large-size and high-density ITO target material, the sintering temperature and the sintering time of the target material can be reduced through hot isostatic pressing sintering in the process, the production efficiency is effectively improved, and the method is suitable for industrial production.
本发明提供了一种ITO溅射靶材的制备方法，包括以下步骤：将纯度为99.995%的In2O3粉体和SnO2粉体按质量比为(90～97):(10～3)进行湿法球磨混合，球磨过程加入少量分散剂和粘结剂，得到高固含量、高流动性能的ITO浆料；将所得的ITO浆料注入石膏模具中进行粉浆浇注成型，得到大尺寸ITO素坯；ITO素坯干燥脱模进行低温脱脂去除有机添加剂；将脱脂后的ITO素坯进行热等静压烧结制备ITO溅射靶材。本发明可用于大尺寸、高致密度ITO靶材的制备，且发明工艺中的热等静压烧结可以降低靶材的烧结温度和烧结时间，有效地提高生产效率，该方法适用于工业化生产。
Preparation method of ITO sputtering target material
一种ITO溅射靶材的制备方法
WANG YONGCHAO (author) / ZHAO ZELIANG (author) / JIA SHIJUN (author) / YOU QINGWEN (author)
2021-12-14
Patent
Electronic Resource
Chinese