A platform for research: civil engineering, architecture and urbanism
The invention provides a preparation method of a ceramic copper-clad plate. The method comprises the following steps: cleaning a copper material, and carrying out thermal oxidation treatment at 500-900 DEG C in an atmosphere containing oxygen and protective gas to form a copper oxide layer on the surface of at least one side of the copper material and to diffuse oxygen atoms in the copper material; and after the copper oxide layer on the copper material having been subjected to thermal oxidation treatment is removed, welding the copper material with a ceramic substrate to form a copper layer on the ceramic substrate, thereby obtaining the ceramic copper-clad plate, wherein the copper grain size of the copper layer at least far away from one side of the ceramic substrate is 20-300 [mu]m. The ceramic copper-clad plate obtained by using the preparation method is appropriate in copper grain size and has a relatively high CCD recognition rate. The invention also provides the ceramic copper-clad plate prepared by using the method.
本发明提供了一种陶瓷覆铜板的制备方法,包括:对铜材进行清洗后,在含氧气和保护气体的气氛下,于500‑900℃的温度下进行热氧化处理,以在铜材的至少一侧表面形成铜氧化物层,且使铜材内扩散有氧原子;在去除热氧化处理后的铜材上的铜氧化物层后,将其与陶瓷基板进行焊接,以在陶瓷基板上形成铜层,得到陶瓷覆铜板;其中,至少远离陶瓷基板一侧的铜层的铜晶粒尺寸为20μm‑300μm。该制备方法得到的陶瓷覆铜板的铜晶粒尺寸合适,具有较高的CCD识别率。本发明还提供了采用该方法制得的陶瓷覆铜板。
The invention provides a preparation method of a ceramic copper-clad plate. The method comprises the following steps: cleaning a copper material, and carrying out thermal oxidation treatment at 500-900 DEG C in an atmosphere containing oxygen and protective gas to form a copper oxide layer on the surface of at least one side of the copper material and to diffuse oxygen atoms in the copper material; and after the copper oxide layer on the copper material having been subjected to thermal oxidation treatment is removed, welding the copper material with a ceramic substrate to form a copper layer on the ceramic substrate, thereby obtaining the ceramic copper-clad plate, wherein the copper grain size of the copper layer at least far away from one side of the ceramic substrate is 20-300 [mu]m. The ceramic copper-clad plate obtained by using the preparation method is appropriate in copper grain size and has a relatively high CCD recognition rate. The invention also provides the ceramic copper-clad plate prepared by using the method.
本发明提供了一种陶瓷覆铜板的制备方法,包括:对铜材进行清洗后,在含氧气和保护气体的气氛下,于500‑900℃的温度下进行热氧化处理,以在铜材的至少一侧表面形成铜氧化物层,且使铜材内扩散有氧原子;在去除热氧化处理后的铜材上的铜氧化物层后,将其与陶瓷基板进行焊接,以在陶瓷基板上形成铜层,得到陶瓷覆铜板;其中,至少远离陶瓷基板一侧的铜层的铜晶粒尺寸为20μm‑300μm。该制备方法得到的陶瓷覆铜板的铜晶粒尺寸合适,具有较高的CCD识别率。本发明还提供了采用该方法制得的陶瓷覆铜板。
Ceramic copper-clad plate and preparation method thereof
一种陶瓷覆铜板及其制备方法
2022-01-14
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
Ceramic copper-clad plate and preparation method thereof
European Patent Office | 2023
|Silicon nitride ceramic copper-clad plate and preparation process thereof
European Patent Office | 2022
|Ceramic powder for processing copper-clad plate and preparation method thereof
European Patent Office | 2022
|Active metal brazing ceramic copper-clad plate and preparation method thereof
European Patent Office | 2024
|Ceramic copper-clad substrate and preparation method thereof
European Patent Office | 2024
|