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A CHEMICAL VAPOR DEPOSITION CHAMBER ARTICLE
The present invention relates to a chemical vapor deposition chamber article. The present invention further relates to a method of processing an article of a chemical vapor deposition chamber for manufacturing semiconductor components, as well as a chemical vapor deposition chamber article obtained through such a method. In a first aspect of the invention, there is provided, a chemical vapor deposition chamber article such as a wafer carrier, for manufacturing semiconductor components, said chamber article having a body and a surface comprised of silicon carbide, characterized in that said surface is provided with a protective layer at least on parts of said surface which are subject to parasitic deposition during said manufacturing of said semiconductor components in said chamber, and said protective layer comprises an oxidized surface.
本发明涉及一种化学气相沉积室制品。本发明还涉及一种处理用于制造半导体元件的化学气相沉积室制品的方法，以及通过这种方法获得的化学气相沉积室制品。在本发明的第一方面，提供了一种化学气相沉积室制品，诸如晶圆载体，用于制造半导体元件，所述室制品具有主体和包括碳化硅的表面，其特征在于，所述表面至少在所述表面的在所述室中制造所述半导体元件期间经受寄生沉积的部分上设置有保护层，并且其中所述保护层包括氧化表面。
A CHEMICAL VAPOR DEPOSITION CHAMBER ARTICLE
The present invention relates to a chemical vapor deposition chamber article. The present invention further relates to a method of processing an article of a chemical vapor deposition chamber for manufacturing semiconductor components, as well as a chemical vapor deposition chamber article obtained through such a method. In a first aspect of the invention, there is provided, a chemical vapor deposition chamber article such as a wafer carrier, for manufacturing semiconductor components, said chamber article having a body and a surface comprised of silicon carbide, characterized in that said surface is provided with a protective layer at least on parts of said surface which are subject to parasitic deposition during said manufacturing of said semiconductor components in said chamber, and said protective layer comprises an oxidized surface.
本发明涉及一种化学气相沉积室制品。本发明还涉及一种处理用于制造半导体元件的化学气相沉积室制品的方法，以及通过这种方法获得的化学气相沉积室制品。在本发明的第一方面，提供了一种化学气相沉积室制品，诸如晶圆载体，用于制造半导体元件，所述室制品具有主体和包括碳化硅的表面，其特征在于，所述表面至少在所述表面的在所述室中制造所述半导体元件期间经受寄生沉积的部分上设置有保护层，并且其中所述保护层包括氧化表面。
A CHEMICAL VAPOR DEPOSITION CHAMBER ARTICLE
化学气相沉积室制品
VAN MUNSTER MARCUS GERARDUS (author) / SONG GUIMING (author)
2022-02-08
Patent
Electronic Resource
Chinese
| British Library Online Contents | 1999
Thermal Plasma Chemical Vapor Deposition
| British Library Online Contents | 1993
4547404 Chemical vapor deposition process
Elsevier | 1987