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A platform for research: civil engineering, architecture and urbanism
High-density silicon carbide brick with high-temperature oxidation resistance and erosion resistance and preparation process of high-density silicon carbide brick
The invention relates to a high-density silicon carbide brick with high-temperature oxidation resistance and erosion resistance and a preparation process of the high-density silicon carbide brick. Silicon carbide, bentonite, bimodal alumina micro powder, an antioxidant and an additive are used as raw materials, and are sintered after being mixed, ground and formed. The prepared silicon carbide brick can be used for 2-3 years at the use temperature of 1500 DEG C, and is superior to the limitation that the use temperature of a common silicon carbide brick cannot exceed 1350 DEG C.
本发明涉及一种具有抗高温氧化和耐侵蚀的高密度碳化硅砖及其制备工艺。采用碳化硅、膨润土、双峰氧化铝微粉、抗氧化剂和外加剂为原料，经混碾成形后烧成。本发明制备好碳化硅砖使用温度在1500℃长期服役2～3年，优于普通碳化硅砖使用温度不得超1350℃的局限。
High-density silicon carbide brick with high-temperature oxidation resistance and erosion resistance and preparation process of high-density silicon carbide brick
The invention relates to a high-density silicon carbide brick with high-temperature oxidation resistance and erosion resistance and a preparation process of the high-density silicon carbide brick. Silicon carbide, bentonite, bimodal alumina micro powder, an antioxidant and an additive are used as raw materials, and are sintered after being mixed, ground and formed. The prepared silicon carbide brick can be used for 2-3 years at the use temperature of 1500 DEG C, and is superior to the limitation that the use temperature of a common silicon carbide brick cannot exceed 1350 DEG C.
本发明涉及一种具有抗高温氧化和耐侵蚀的高密度碳化硅砖及其制备工艺。采用碳化硅、膨润土、双峰氧化铝微粉、抗氧化剂和外加剂为原料，经混碾成形后烧成。本发明制备好碳化硅砖使用温度在1500℃长期服役2～3年，优于普通碳化硅砖使用温度不得超1350℃的局限。
High-density silicon carbide brick with high-temperature oxidation resistance and erosion resistance and preparation process of high-density silicon carbide brick
一种具有抗高温氧化和耐侵蚀的高密度碳化硅砖及其制备工艺
CHEN SONGLIN (author) / YU XIAOPING (author) / YU SHENG (author) / WEI HAN (author) / ZHANG LIN (author) / WU YUEFENG (author) / QIAN ZHIHAO (author) / QIAN JUNFENG (author)
2022-04-05
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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