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Ceramic metal-clad plate with high etching precision, preparation method and chip packaging module
The invention discloses a ceramic metal-clad plate with high etching precision, a preparation method and a chip packaging module. The high-etching-precision ceramic metal-clad plate comprises a ceramic layer (a1), a metal layer (b1) and an active metal bonding layer (t1), wherein the active metal bonding layer (t1) is positioned on the lower surface of a residual metal circuit layer (b2) after the metal layer (b1) is etched. The active metal bonding layer is only printed on the lower surface of the metal circuit layer (b2) which is not etched, so that no active metal exists in the etched position, and the problem that the active metal cannot be etched is solved. In addition, the groove is formed in the ceramic layer, the active metal bonding layer is arranged in the groove, and the ratio of the thickness of the active metal bonding layer (t1) to the depth of the groove (a2) ranges from 1.02 to 1.15, so that the welding strength can be improved, and the problem that the welded metal layer is uneven can be solved.
本发明公开了一种高刻蚀精度陶瓷覆金属板、制备方法和芯片封装模块。该高刻蚀精度陶瓷覆金属板包括陶瓷层(a1)、金属层(b1)和活性金属粘接层(t1)，其中活性金属粘接层(t1)位于金属层(b1)被刻蚀后剩余的金属线路层(b2)下表面。通过仅在未被刻蚀的金属线路层(b2)下表面印刷活性金属粘接层，保证被刻蚀位置不存在活性金属，从而解决活性金属不能被刻蚀的问题。另外通过在陶瓷层上设置凹槽，将活性金属粘接层置于凹槽内，且活性金属粘接层(t1)厚度/凹槽(a2)深度比值在1.02～1.15之间，既能提升焊接强度，又能解决焊接后的金属层不平整问题。
Ceramic metal-clad plate with high etching precision, preparation method and chip packaging module
The invention discloses a ceramic metal-clad plate with high etching precision, a preparation method and a chip packaging module. The high-etching-precision ceramic metal-clad plate comprises a ceramic layer (a1), a metal layer (b1) and an active metal bonding layer (t1), wherein the active metal bonding layer (t1) is positioned on the lower surface of a residual metal circuit layer (b2) after the metal layer (b1) is etched. The active metal bonding layer is only printed on the lower surface of the metal circuit layer (b2) which is not etched, so that no active metal exists in the etched position, and the problem that the active metal cannot be etched is solved. In addition, the groove is formed in the ceramic layer, the active metal bonding layer is arranged in the groove, and the ratio of the thickness of the active metal bonding layer (t1) to the depth of the groove (a2) ranges from 1.02 to 1.15, so that the welding strength can be improved, and the problem that the welded metal layer is uneven can be solved.
本发明公开了一种高刻蚀精度陶瓷覆金属板、制备方法和芯片封装模块。该高刻蚀精度陶瓷覆金属板包括陶瓷层(a1)、金属层(b1)和活性金属粘接层(t1)，其中活性金属粘接层(t1)位于金属层(b1)被刻蚀后剩余的金属线路层(b2)下表面。通过仅在未被刻蚀的金属线路层(b2)下表面印刷活性金属粘接层，保证被刻蚀位置不存在活性金属，从而解决活性金属不能被刻蚀的问题。另外通过在陶瓷层上设置凹槽，将活性金属粘接层置于凹槽内，且活性金属粘接层(t1)厚度/凹槽(a2)深度比值在1.02～1.15之间，既能提升焊接强度，又能解决焊接后的金属层不平整问题。
Ceramic metal-clad plate with high etching precision, preparation method and chip packaging module
高刻蚀精度陶瓷覆金属板、制备方法及芯片封装模块
YANG XIAOZHAN (author)
2022-04-22
Patent
Electronic Resource
Chinese
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