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Preparation method of light-cured silicon nitride ceramic slurry and silicon nitride ceramic
The invention discloses photocuring silicon nitride ceramic slurry and a preparation method of silicon nitride ceramic, and relates to the technical field of ceramic materials. The preparation method comprises the following steps: stirring and mixing resin, a photoinitiator and a plasticizer to obtain photosensitive resin; the resin is prepared from one or more of o-phenyl phenoxyethyl acrylate, ethoxylated pentaerythritol tetraacrylate, trimethylolpropane triacrylate and tetrahydrofuran acrylate, and the solvent is a solvent; the content of the o-phenyl phenoxyethyl acrylate in the resin is 10 to 90 weight percent. The preparation method provided by the invention can effectively solve the technical defects that the solid phase content of the traditional silicon nitride ceramic slurry is low and the curing thickness of a single layer formed by photocuring is low.
本发明公开了一种光固化氮化硅陶瓷浆料、氮化硅陶瓷的制备方法，涉及陶瓷材料技术领域。本发明将树脂、光引发剂、增塑剂进行搅拌混合，得到光敏树脂；所述的树脂包括邻苯基苯氧乙基丙烯酸酯，以及乙氧化季戊四醇四丙烯酸酯、三羟甲基丙烷三丙烯酸酯、四氢呋喃丙烯酸酯中的一种或多种；树脂中邻苯基苯氧乙基丙烯酸酯的含量为10～90wt％。本发明的制备方法能有效解决传统的氮化硅陶瓷浆料的固相含量低，以及其光固化成型的单层固化厚度低的技术缺陷。
Preparation method of light-cured silicon nitride ceramic slurry and silicon nitride ceramic
The invention discloses photocuring silicon nitride ceramic slurry and a preparation method of silicon nitride ceramic, and relates to the technical field of ceramic materials. The preparation method comprises the following steps: stirring and mixing resin, a photoinitiator and a plasticizer to obtain photosensitive resin; the resin is prepared from one or more of o-phenyl phenoxyethyl acrylate, ethoxylated pentaerythritol tetraacrylate, trimethylolpropane triacrylate and tetrahydrofuran acrylate, and the solvent is a solvent; the content of the o-phenyl phenoxyethyl acrylate in the resin is 10 to 90 weight percent. The preparation method provided by the invention can effectively solve the technical defects that the solid phase content of the traditional silicon nitride ceramic slurry is low and the curing thickness of a single layer formed by photocuring is low.
本发明公开了一种光固化氮化硅陶瓷浆料、氮化硅陶瓷的制备方法，涉及陶瓷材料技术领域。本发明将树脂、光引发剂、增塑剂进行搅拌混合，得到光敏树脂；所述的树脂包括邻苯基苯氧乙基丙烯酸酯，以及乙氧化季戊四醇四丙烯酸酯、三羟甲基丙烷三丙烯酸酯、四氢呋喃丙烯酸酯中的一种或多种；树脂中邻苯基苯氧乙基丙烯酸酯的含量为10～90wt％。本发明的制备方法能有效解决传统的氮化硅陶瓷浆料的固相含量低，以及其光固化成型的单层固化厚度低的技术缺陷。
Preparation method of light-cured silicon nitride ceramic slurry and silicon nitride ceramic
一种光固化氮化硅陶瓷浆料、氮化硅陶瓷的制备方法
WU SHANGHUA (author) / ZOU WENJING (author) / HUANG YAO (author)
2022-05-24
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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