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Silicon carbide atmosphere plasma polishing equipment and polishing method thereof
The invention relates to silicon carbide atmospheric plasma polishing equipment and a polishing method thereof, the equipment comprises a workbench, an ion torch electrode, a radio frequency power supply, a carrier gas Ar source, a liquid ethanol source, a fluorine-containing active gas source, an auxiliary gas source and a gas-liquid mixing evaporator, the carrier gas Ar source is connected with the gas-liquid mixing evaporator to provide argon; the liquid ethanol source is connected with the gas-liquid mixing evaporator to provide ethanol, and the fluorine-containing active gas source and the auxiliary gas source are connected to the ion torch electrode to provide fluorine-containing active gas and auxiliary gas to be conveyed to the ion torch electrode respectively; the ion torch electrode is covered with an ion torch shell, a gas reaction chamber is formed in the space between the ion torch electrode and the ion torch shell, and a silicon carbide ceramic workpiece to be polished is placed on the workbench and located on the lower portion of the gas reaction chamber. Argon is used for replacing helium to serve as carrier gas for atmospheric pressure plasma polishing, and the problems that at present, natural gas resources are exhausted, and the polishing cost is high are solved.
一种碳化硅大气等离子体抛光设备及其抛光方法，其中设备包括工作台、离子炬电极、射频电源、载气Ar源、液体乙醇源、含氟活性气体源、辅助气体源和气液混合蒸发器，载气Ar源连接气液混合蒸发器提供氩气，液体乙醇源连接气液混合蒸发器提供乙醇，含氟活性气体源和辅助气体源连接至离子炬电极以分别提供含氟活性气体和辅助气体输送到离子炬电极；离子炬电极的外部罩设有离子炬壳体，离子炬电极与离子炬壳体之间的空间形成气体反应室，工作台上并位于气体反应室的下部放置待抛光的碳化硅陶瓷工件。本发明使用氩气代替氦气作为大气压等离子体抛光的载气，解决目前天然气资源枯竭、抛光成本高昂的问题。
Silicon carbide atmosphere plasma polishing equipment and polishing method thereof
The invention relates to silicon carbide atmospheric plasma polishing equipment and a polishing method thereof, the equipment comprises a workbench, an ion torch electrode, a radio frequency power supply, a carrier gas Ar source, a liquid ethanol source, a fluorine-containing active gas source, an auxiliary gas source and a gas-liquid mixing evaporator, the carrier gas Ar source is connected with the gas-liquid mixing evaporator to provide argon; the liquid ethanol source is connected with the gas-liquid mixing evaporator to provide ethanol, and the fluorine-containing active gas source and the auxiliary gas source are connected to the ion torch electrode to provide fluorine-containing active gas and auxiliary gas to be conveyed to the ion torch electrode respectively; the ion torch electrode is covered with an ion torch shell, a gas reaction chamber is formed in the space between the ion torch electrode and the ion torch shell, and a silicon carbide ceramic workpiece to be polished is placed on the workbench and located on the lower portion of the gas reaction chamber. Argon is used for replacing helium to serve as carrier gas for atmospheric pressure plasma polishing, and the problems that at present, natural gas resources are exhausted, and the polishing cost is high are solved.
一种碳化硅大气等离子体抛光设备及其抛光方法，其中设备包括工作台、离子炬电极、射频电源、载气Ar源、液体乙醇源、含氟活性气体源、辅助气体源和气液混合蒸发器，载气Ar源连接气液混合蒸发器提供氩气，液体乙醇源连接气液混合蒸发器提供乙醇，含氟活性气体源和辅助气体源连接至离子炬电极以分别提供含氟活性气体和辅助气体输送到离子炬电极；离子炬电极的外部罩设有离子炬壳体，离子炬电极与离子炬壳体之间的空间形成气体反应室，工作台上并位于气体反应室的下部放置待抛光的碳化硅陶瓷工件。本发明使用氩气代替氦气作为大气压等离子体抛光的载气，解决目前天然气资源枯竭、抛光成本高昂的问题。
Silicon carbide atmosphere plasma polishing equipment and polishing method thereof
一种碳化硅大气等离子体抛光设备及其抛光方法
WU MINGYANG (author) / LIANG FENGSHUANG (author) / LIU LIFEI (author) / LI LUBIN (author) / ZHANG FENG (author)
2022-06-14
Patent
Electronic Resource
Chinese
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