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Preparation method of semiconductor ceramic material
The invention discloses a semiconductor ceramic material preparation method, raw materials comprise barium titanate, vanadium trioxide, chromium sesquioxide, boron carbide powder, a graphene material, yttrium oxide powder, zirconium dioxide, an anti-aging agent and polyolefin, and the ratio of barium titanate to vanadium trioxide to chromium sesquioxide to boron carbide powder to yttrium oxide powder to graphene material to zirconium dioxide is 70: 10: 2: 10: 2: 3: 3; according to the preparation method of the semiconductor ceramic material, the high-temperature stability is ensured through the boron carbide powder, the use of the semiconductor material is ensured, the temperature detection is ensured through the vanadium trioxide and the chromium sesquioxide, the detection speed is ensured, the heat conduction is performed through the graphene material, and the rapid detection of the temperature is ensured; polyolefin is used for protecting a semiconductor material and preventing the semiconductor material from being broken, zirconium dioxide is used for guaranteeing use and preventing the high-temperature expansion condition, and an anti-aging agent is used for guaranteeing the appearance color and attractiveness of the semiconductor ceramic.
本发明公开了一种半导体陶瓷材料制备方法，原材料包括钛酸钡、三氧化二钒、三氧化二铬、碳化硼粉、石墨烯材料、氧化钇粉、二氧化锆、防老剂和聚烯烃，钛酸钡、三氧化二钒、三氧化二铬、碳化硼粉、氧化钇粉、石墨烯材料、二氧化锆的比例为：70:10:2:10:2:3:3；本发明一种半导体陶瓷材料制备方法通过碳化硼粉进行保证高温稳定性，保证半导体材料的使用，通过三氧化二钒和三氧化二铬进行保证温度的检测，保证检测速度，通过石墨烯材料进行导热，保证温度的快速检测，通过聚烯烃进行保护半导体材料，防止出现摔坏的情况，通过二氧化锆进行保证使用，防止出现高温膨胀的情况，通过防老剂进行保证本半导体陶瓷的外表颜色，保证美观性。
Preparation method of semiconductor ceramic material
The invention discloses a semiconductor ceramic material preparation method, raw materials comprise barium titanate, vanadium trioxide, chromium sesquioxide, boron carbide powder, a graphene material, yttrium oxide powder, zirconium dioxide, an anti-aging agent and polyolefin, and the ratio of barium titanate to vanadium trioxide to chromium sesquioxide to boron carbide powder to yttrium oxide powder to graphene material to zirconium dioxide is 70: 10: 2: 10: 2: 3: 3; according to the preparation method of the semiconductor ceramic material, the high-temperature stability is ensured through the boron carbide powder, the use of the semiconductor material is ensured, the temperature detection is ensured through the vanadium trioxide and the chromium sesquioxide, the detection speed is ensured, the heat conduction is performed through the graphene material, and the rapid detection of the temperature is ensured; polyolefin is used for protecting a semiconductor material and preventing the semiconductor material from being broken, zirconium dioxide is used for guaranteeing use and preventing the high-temperature expansion condition, and an anti-aging agent is used for guaranteeing the appearance color and attractiveness of the semiconductor ceramic.
本发明公开了一种半导体陶瓷材料制备方法，原材料包括钛酸钡、三氧化二钒、三氧化二铬、碳化硼粉、石墨烯材料、氧化钇粉、二氧化锆、防老剂和聚烯烃，钛酸钡、三氧化二钒、三氧化二铬、碳化硼粉、氧化钇粉、石墨烯材料、二氧化锆的比例为：70:10:2:10:2:3:3；本发明一种半导体陶瓷材料制备方法通过碳化硼粉进行保证高温稳定性，保证半导体材料的使用，通过三氧化二钒和三氧化二铬进行保证温度的检测，保证检测速度，通过石墨烯材料进行导热，保证温度的快速检测，通过聚烯烃进行保护半导体材料，防止出现摔坏的情况，通过二氧化锆进行保证使用，防止出现高温膨胀的情况，通过防老剂进行保证本半导体陶瓷的外表颜色，保证美观性。
Preparation method of semiconductor ceramic material
一种半导体陶瓷材料制备方法
YANG CHUANGHUA (author)
2022-07-01
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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