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Preparation method of semiconductor silicon carbide ceramic material
The invention relates to the technical field of preparation of silicon carbide, and discloses a preparation method of a semiconductor silicon carbide ceramic material, which comprises the following steps: S1, in a furnace body under the protection of gas in a vacuum environment; s2, sufficiently mixing the particles of the high-purity carbon source with the particles of the high-purity silicon to prepare a reaction precursor in a certain proportion; s3, melting and evaporating the silicon raw material in the reaction precursor in a high-temperature environment according to the step S2; s4, according to the step S3, the molten and evaporated silicon melt reacts with a high-purity carbon raw material to generate silicon carbide, a high-purity carbon source free of metal impurities is adopted to replace a petroleum coke carbon raw material in an existing preparation method, and due to the fact that the purity can reach 99.995% or above, and the impurity content of the silicon raw material is smaller than 100 ppm, the purity of the silicon raw material can reach 99.995% or above; according to the present invention, the silicon raw material is in the melting or evaporation gasification state during the carbonization reaction, the purity of the prepared silicon carbide is high and can achieve 99.995%, and the preparation method does not produce the metal ash content, avoids the environmental pollution, and has the large market prospect.
本发明涉及碳化硅的制备技术领域，且公开了半导体碳化硅陶瓷材料制备方法，包括如下步骤：S1.利用真空环境氫气气体保护下的炉体内；S2.使用高纯碳源的颗粒与高纯硅的颗粒充分混合制备成一定比例的反应前驱体；S3.根据S2步骤，反应前驱体中的硅原材料通过高温环境进行熔解和蒸发；S4.根据S3步骤，熔解和蒸发的硅熔融体与高纯碳原材料反应生成碳化硅，采用不含金属杂质的高纯碳源来代替现有制备方法中的石油焦碳素原料，由于纯度可到99.995％以上，硅原材料的杂质含量小于100ppm，在进行碳化反应时硅原材料为熔化或者蒸发气化的状态，所制备的碳化硅纯度较高，达到99.995％，这种制备方法不产生金属灰分，避免了对环境的污染，具有较大的市场前景。
Preparation method of semiconductor silicon carbide ceramic material
The invention relates to the technical field of preparation of silicon carbide, and discloses a preparation method of a semiconductor silicon carbide ceramic material, which comprises the following steps: S1, in a furnace body under the protection of gas in a vacuum environment; s2, sufficiently mixing the particles of the high-purity carbon source with the particles of the high-purity silicon to prepare a reaction precursor in a certain proportion; s3, melting and evaporating the silicon raw material in the reaction precursor in a high-temperature environment according to the step S2; s4, according to the step S3, the molten and evaporated silicon melt reacts with a high-purity carbon raw material to generate silicon carbide, a high-purity carbon source free of metal impurities is adopted to replace a petroleum coke carbon raw material in an existing preparation method, and due to the fact that the purity can reach 99.995% or above, and the impurity content of the silicon raw material is smaller than 100 ppm, the purity of the silicon raw material can reach 99.995% or above; according to the present invention, the silicon raw material is in the melting or evaporation gasification state during the carbonization reaction, the purity of the prepared silicon carbide is high and can achieve 99.995%, and the preparation method does not produce the metal ash content, avoids the environmental pollution, and has the large market prospect.
本发明涉及碳化硅的制备技术领域，且公开了半导体碳化硅陶瓷材料制备方法，包括如下步骤：S1.利用真空环境氫气气体保护下的炉体内；S2.使用高纯碳源的颗粒与高纯硅的颗粒充分混合制备成一定比例的反应前驱体；S3.根据S2步骤，反应前驱体中的硅原材料通过高温环境进行熔解和蒸发；S4.根据S3步骤，熔解和蒸发的硅熔融体与高纯碳原材料反应生成碳化硅，采用不含金属杂质的高纯碳源来代替现有制备方法中的石油焦碳素原料，由于纯度可到99.995％以上，硅原材料的杂质含量小于100ppm，在进行碳化反应时硅原材料为熔化或者蒸发气化的状态，所制备的碳化硅纯度较高，达到99.995％，这种制备方法不产生金属灰分，避免了对环境的污染，具有较大的市场前景。
Preparation method of semiconductor silicon carbide ceramic material
半导体碳化硅陶瓷材料制备方法
ZHOU QIANG (author) / GAO HUI (author) / ZHAO YUN (author) / ZHAO LEI (author) / KONG YUNHONG (author) / LI PING (author)
2024-11-15
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
| European Patent Office | 2015
| European Patent Office | 2023
| European Patent Office | 2023
| European Patent Office | 2015