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Method for preparing high-thermal-conductivity silicon nitride ceramic substrate through silicon powder tape casting
The invention relates to a method for preparing a high-thermal-conductivity silicon nitride ceramic substrate by tape casting of silicon powder, which comprises the following steps: (1) taking silicon powder as raw material powder, at least one of magnesium oxide and calcium oxide as a sintering aid A, one of rare earth oxides as a sintering aid B, at least one of zirconium oxide, titanium oxide and hafnium oxide as a sintering aid C, and sintering the raw material powder in the sintering aid A; adding the mixture into a solvent containing a dispersing agent, then adding a binder and a plasticizer, and mixing to obtain mixed slurry; (2) defoaming the mixed slurry for 5-60 minutes under the vacuum degree of 10-300Pa, and then, flowing out a raw material belt with the thickness of 50-1000 microns by adopting tape casting equipment; and (3) cutting and laminating the obtained raw material tape to obtain a silicon nitride substrate blank with a required thickness, and then carrying out vacuum debonding, nitriding treatment and sintering to obtain the high-thermal-conductivity silicon nitride ceramic substrate.
本发明涉及一种硅粉流延成型制备高导热氮化硅陶瓷基片的方法，包括：（1）以硅粉作为原料粉体，以氧化镁、氧化钙中的至少一种作为烧结助剂A，以稀土氧化物中的一种作为烧结助剂B，以氧化锆、氧化钛和氧化铪中至少一种作为烧结助剂C，加入到含有分散剂的溶剂中，再加入粘结剂和塑性剂并混合，得到混合浆料；（2）将混合浆料在10～300Pa真空度下脱泡5～60分钟后，采用流延成型设备流出厚度为50～1000微米的生料带；（3）将所得生料带经切割、叠层后得到需要厚度的氮化硅基片坯体，再经真空脱粘、氮化处理和烧结，得到高导热氮化硅陶瓷基片。
Method for preparing high-thermal-conductivity silicon nitride ceramic substrate through silicon powder tape casting
The invention relates to a method for preparing a high-thermal-conductivity silicon nitride ceramic substrate by tape casting of silicon powder, which comprises the following steps: (1) taking silicon powder as raw material powder, at least one of magnesium oxide and calcium oxide as a sintering aid A, one of rare earth oxides as a sintering aid B, at least one of zirconium oxide, titanium oxide and hafnium oxide as a sintering aid C, and sintering the raw material powder in the sintering aid A; adding the mixture into a solvent containing a dispersing agent, then adding a binder and a plasticizer, and mixing to obtain mixed slurry; (2) defoaming the mixed slurry for 5-60 minutes under the vacuum degree of 10-300Pa, and then, flowing out a raw material belt with the thickness of 50-1000 microns by adopting tape casting equipment; and (3) cutting and laminating the obtained raw material tape to obtain a silicon nitride substrate blank with a required thickness, and then carrying out vacuum debonding, nitriding treatment and sintering to obtain the high-thermal-conductivity silicon nitride ceramic substrate.
本发明涉及一种硅粉流延成型制备高导热氮化硅陶瓷基片的方法，包括：（1）以硅粉作为原料粉体，以氧化镁、氧化钙中的至少一种作为烧结助剂A，以稀土氧化物中的一种作为烧结助剂B，以氧化锆、氧化钛和氧化铪中至少一种作为烧结助剂C，加入到含有分散剂的溶剂中，再加入粘结剂和塑性剂并混合，得到混合浆料；（2）将混合浆料在10～300Pa真空度下脱泡5～60分钟后，采用流延成型设备流出厚度为50～1000微米的生料带；（3）将所得生料带经切割、叠层后得到需要厚度的氮化硅基片坯体，再经真空脱粘、氮化处理和烧结，得到高导热氮化硅陶瓷基片。
Method for preparing high-thermal-conductivity silicon nitride ceramic substrate through silicon powder tape casting
一种硅粉流延成型制备高导热氮化硅陶瓷基片的方法
ZHANG JINGXIAN (author) / DUAN YUSEN (author) / WU WEIWEI (author)
2022-09-09
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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