A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
High-toughness silicon nitride ceramic material and preparation method thereof
The invention belongs to the technical field of ceramic materials, and provides a high-toughness silicon nitride ceramic material and a preparation method thereof. According to the method, silicon nitride is firstly subjected to heat treatment, so that the surface of the silicon nitride is coated with a layer of SiO2 film with oxide characteristics, sintering densification is promoted, the ceramic performance is improved, then the thermally oxidized silicon nitride, a reinforcing phase and a sintering aid are prepared into a green body, and the sintering aid is used for promoting densification and ensuring the hardness of the ceramic material; the reinforcing phase is used for improving the toughness of the silicon nitride ceramic material, and finally, a sintering mode of combining high-temperature sintering and low-temperature sintering is adopted, so that grain boundary migration can be inhibited, and a blank is densified by utilizing grain boundary diffusion, so that the hardness of the ceramic material is ensured. The result of the embodiment shows that the Vickers hardness of the high-toughness silicon nitride ceramic material prepared by the preparation method provided by the invention can reach 22.7 GPa, and the fracture toughness can reach 16.7 MPa.m < 1/2 >.
本发明属于陶瓷材料技术领域，提供了一种高韧氮化硅陶瓷材料及其制备方法。本发明通过先对氮化硅进行热处理，使得氮化硅表面包覆一层具有氧化物特性的SiO2膜，促进烧结致密化及提高陶瓷性能，然后将热氧化氮化硅与增强相和烧结助剂制成坯体，其中的烧结助剂用于促进致密化，保证陶瓷材料的硬度，增强相用来提高氮化硅陶瓷材料的韧性，最后采用高温烧结和低温烧结结合的烧结方式，可抑制晶界迁移，并利用晶界扩散使坯体达到致密化，从而保证了陶瓷材料的硬度。实施例的结果显示，本发明提供的制备方法制备的高韧氮化硅陶瓷材料的维氏硬度可达22.7GPa，断裂韧性可达16.7MPa·m1/2。
High-toughness silicon nitride ceramic material and preparation method thereof
The invention belongs to the technical field of ceramic materials, and provides a high-toughness silicon nitride ceramic material and a preparation method thereof. According to the method, silicon nitride is firstly subjected to heat treatment, so that the surface of the silicon nitride is coated with a layer of SiO2 film with oxide characteristics, sintering densification is promoted, the ceramic performance is improved, then the thermally oxidized silicon nitride, a reinforcing phase and a sintering aid are prepared into a green body, and the sintering aid is used for promoting densification and ensuring the hardness of the ceramic material; the reinforcing phase is used for improving the toughness of the silicon nitride ceramic material, and finally, a sintering mode of combining high-temperature sintering and low-temperature sintering is adopted, so that grain boundary migration can be inhibited, and a blank is densified by utilizing grain boundary diffusion, so that the hardness of the ceramic material is ensured. The result of the embodiment shows that the Vickers hardness of the high-toughness silicon nitride ceramic material prepared by the preparation method provided by the invention can reach 22.7 GPa, and the fracture toughness can reach 16.7 MPa.m < 1/2 >.
本发明属于陶瓷材料技术领域，提供了一种高韧氮化硅陶瓷材料及其制备方法。本发明通过先对氮化硅进行热处理，使得氮化硅表面包覆一层具有氧化物特性的SiO2膜，促进烧结致密化及提高陶瓷性能，然后将热氧化氮化硅与增强相和烧结助剂制成坯体，其中的烧结助剂用于促进致密化，保证陶瓷材料的硬度，增强相用来提高氮化硅陶瓷材料的韧性，最后采用高温烧结和低温烧结结合的烧结方式，可抑制晶界迁移，并利用晶界扩散使坯体达到致密化，从而保证了陶瓷材料的硬度。实施例的结果显示，本发明提供的制备方法制备的高韧氮化硅陶瓷材料的维氏硬度可达22.7GPa，断裂韧性可达16.7MPa·m1/2。
High-toughness silicon nitride ceramic material and preparation method thereof
一种高韧氮化硅陶瓷材料及其制备方法
XIAO LIANG (author) / TAN QINGWEN (author) / TAN HAOWEN (author) / QIAN LIHONG (author) / XIE QINGZHONG (author)
2022-12-30
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
High-toughness silicon nitride ceramic and preparation method thereof
| European Patent Office | 2020
High-toughness silicon carbide ceramic material and preparation method thereof
| European Patent Office | 2023
| European Patent Office | 2021
| European Patent Office | 2023
High-strength and high-toughness silicon carbide ceramic material and preparation method thereof
| European Patent Office | 2024