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Sintered silicon nitride substrate
Provided is a sintered silicon nitride substrate in which, in a state in which a silicon nitride powder is not ground after being sintered, the occurrence of problems such as contamination caused by a boron nitride powder or the like used as a mold release material due to a lattice structure formed by silicon nitride crystals formed on the surface, bonding strength during lamination of metal layers or the like, and insulation resistance can be reduced. The silicon nitride sintered substrate is a silicon nitride substrate in an unpolished state after sintering, the cumulative volume of pores having a pore diameter of 1 [mu] m to 10 [mu] m measured by mercury intrusion method is 7.0 * 10-5 mL/cm2 or less, and preferably, the surface Ra is 0.6 [mu] m or less, and the value of the arithmetic mean curvature (Spc) at the peak top is 4.5 [1/mm] or less.
提供一种氮化硅烧结基板，其在将氮化硅粉末烧结后未研磨的状态下，能够减少由形成于表面的氮化硅晶体形成的网格状构造引起的、作为脱模材料使用的氮化硼粉末等导致的污染、金属层等的层叠时的接合强度、绝缘耐性等问题的产生。一种氮化硅烧结基板，其是烧结后未研磨的状态的氮化硅基板，通过压汞法测定的细孔直径为1μm～10μm的细孔累积容积为7.0×10‑5mL/cm2以下，优选的是，其表面的Ra为0.6μm以下、峰顶点的算术平均曲率(Spc)的值为4.5[1/mm]以下。
Sintered silicon nitride substrate
Provided is a sintered silicon nitride substrate in which, in a state in which a silicon nitride powder is not ground after being sintered, the occurrence of problems such as contamination caused by a boron nitride powder or the like used as a mold release material due to a lattice structure formed by silicon nitride crystals formed on the surface, bonding strength during lamination of metal layers or the like, and insulation resistance can be reduced. The silicon nitride sintered substrate is a silicon nitride substrate in an unpolished state after sintering, the cumulative volume of pores having a pore diameter of 1 [mu] m to 10 [mu] m measured by mercury intrusion method is 7.0 * 10-5 mL/cm2 or less, and preferably, the surface Ra is 0.6 [mu] m or less, and the value of the arithmetic mean curvature (Spc) at the peak top is 4.5 [1/mm] or less.
提供一种氮化硅烧结基板，其在将氮化硅粉末烧结后未研磨的状态下，能够减少由形成于表面的氮化硅晶体形成的网格状构造引起的、作为脱模材料使用的氮化硼粉末等导致的污染、金属层等的层叠时的接合强度、绝缘耐性等问题的产生。一种氮化硅烧结基板，其是烧结后未研磨的状态的氮化硅基板，通过压汞法测定的细孔直径为1μm～10μm的细孔累积容积为7.0×10‑5mL/cm2以下，优选的是，其表面的Ra为0.6μm以下、峰顶点的算术平均曲率(Spc)的值为4.5[1/mm]以下。
Sintered silicon nitride substrate
氮化硅烧结基板
MITSUMURA NORIHIRA (author) / KUSANO DAI (author) / KAWAI HIDEAKI (author)
2023-02-14
Patent
Electronic Resource
Chinese
| European Patent Office | 2020
| European Patent Office | 2017
| European Patent Office | 2020
| European Patent Office | 2019