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SILICON NITRIDE SINTERED SUBSTRATE
To provide a large sized silicon nitride sintered substrate having excellent thermal conductivity and excellent mechanical strength (flexure hardness and fracture toughness).SOLUTION: A silicon nitride sintered substrate includes a principal plane larger than a square with a side length of 120 mm and has a ratio of a density dc at a central part of the principal plane and a density de at its end part, dc/de, of 0.98 or over and 1.0 or under, a void ratio vc at the central part of the principal plane of 1.80% or under, a void ratio ve at the end part of 1.00% or under, a ratio of the void ratio vc at the central part and the void ratio ve at the end part, ve/vc, of 0.50 or over and 1.06 or under, a thickness of 0.15 mm or over and 2.0 mm or under, and Weibull coefficient of dielectric breakdown voltage of 6 or over.SELECTED DRAWING: Figure 1(a)
【課題】大型で、熱伝導性に優れるとともに、機械的強度（曲げ強度及び破壊靱性）に優れた窒化ケイ素焼結基板を提供する。【解決手段】１辺が１２０ｍｍの正方形よりも大きい形状の主面を有し、前記主面における中央部の密度ｄｃと端部の密度ｄｅの比ｄｃ/ｄｅが０．９８以上かつ１．０以下であり、前記主面における中央部のボイド率ｖｃが１．８０％以下であり、端部のボイド率ｖｅが１．００％以下であり、前記中央部のボイド率ｖｃと前記端部のボイド率ｖｅとの比ｖｅ／ｖｃが０．５０以上１．０６以下であり、０．１５ｍｍ以上２．０ｍｍ以下の厚さを有し、６以上の絶縁破壊耐圧のワイブル係数を有する、窒化ケイ素焼結基板。【選択図】図１(a)
SILICON NITRIDE SINTERED SUBSTRATE
To provide a large sized silicon nitride sintered substrate having excellent thermal conductivity and excellent mechanical strength (flexure hardness and fracture toughness).SOLUTION: A silicon nitride sintered substrate includes a principal plane larger than a square with a side length of 120 mm and has a ratio of a density dc at a central part of the principal plane and a density de at its end part, dc/de, of 0.98 or over and 1.0 or under, a void ratio vc at the central part of the principal plane of 1.80% or under, a void ratio ve at the end part of 1.00% or under, a ratio of the void ratio vc at the central part and the void ratio ve at the end part, ve/vc, of 0.50 or over and 1.06 or under, a thickness of 0.15 mm or over and 2.0 mm or under, and Weibull coefficient of dielectric breakdown voltage of 6 or over.SELECTED DRAWING: Figure 1(a)
【課題】大型で、熱伝導性に優れるとともに、機械的強度（曲げ強度及び破壊靱性）に優れた窒化ケイ素焼結基板を提供する。【解決手段】１辺が１２０ｍｍの正方形よりも大きい形状の主面を有し、前記主面における中央部の密度ｄｃと端部の密度ｄｅの比ｄｃ/ｄｅが０．９８以上かつ１．０以下であり、前記主面における中央部のボイド率ｖｃが１．８０％以下であり、端部のボイド率ｖｅが１．００％以下であり、前記中央部のボイド率ｖｃと前記端部のボイド率ｖｅとの比ｖｅ／ｖｃが０．５０以上１．０６以下であり、０．１５ｍｍ以上２．０ｍｍ以下の厚さを有し、６以上の絶縁破壊耐圧のワイブル係数を有する、窒化ケイ素焼結基板。【選択図】図１(a)
SILICON NITRIDE SINTERED SUBSTRATE
窒化ケイ素焼結基板
HAMAYOSHI SHIGEYUKI (author)
2022-01-14
Patent
Electronic Resource
Japanese
IPC:
C04B
Kalk
,
LIME
| European Patent Office | 2020
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| European Patent Office | 2020
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