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Aluminum nitride substrate and preparation method thereof
The invention discloses an aluminum nitride substrate and a preparation method thereof, and belongs to the technical field of heat dissipation of semiconductors. The aluminum nitride substrate comprises an aluminum nitride ceramic plate, chemical components of the aluminum nitride ceramic plate comprise metal molybdenum and aluminum nitride, and the volume ratio of the metal molybdenum to the aluminum nitride is 3-8%. The aluminum nitride ceramic plate provided by the invention has a relatively low thermal expansion coefficient of 2.7-3.2 ppm/DEG C and a relatively high heat conduction coefficient of greater than 150W/mk. When the aluminum nitride ceramic substrate provided by the invention is used for heat dissipation of the chip, the heat dissipation performance of the chip can be improved, and meanwhile, the thermal stress between the substrate and the chip can be reduced.
一种氮化铝基板及其制备方法，属于半导体的散热技术领域。氮化铝基板包括氮化铝陶瓷板，且氮化铝陶瓷板的化学成分含有金属钼和氮化铝，金属钼与氮化铝的体积之比的比值为3‑8％。本申请提供的氮化铝陶瓷板具有2.7‑3.2ppm/℃的较低的热膨胀系数，和大于150W/mk的较高的热传导系数。利用本申请提供的氮化铝陶瓷基板进行芯片的散热，可以在提高芯片的散热性的同时，还能减小基板与芯片之间的热应力。
Aluminum nitride substrate and preparation method thereof
The invention discloses an aluminum nitride substrate and a preparation method thereof, and belongs to the technical field of heat dissipation of semiconductors. The aluminum nitride substrate comprises an aluminum nitride ceramic plate, chemical components of the aluminum nitride ceramic plate comprise metal molybdenum and aluminum nitride, and the volume ratio of the metal molybdenum to the aluminum nitride is 3-8%. The aluminum nitride ceramic plate provided by the invention has a relatively low thermal expansion coefficient of 2.7-3.2 ppm/DEG C and a relatively high heat conduction coefficient of greater than 150W/mk. When the aluminum nitride ceramic substrate provided by the invention is used for heat dissipation of the chip, the heat dissipation performance of the chip can be improved, and meanwhile, the thermal stress between the substrate and the chip can be reduced.
一种氮化铝基板及其制备方法，属于半导体的散热技术领域。氮化铝基板包括氮化铝陶瓷板，且氮化铝陶瓷板的化学成分含有金属钼和氮化铝，金属钼与氮化铝的体积之比的比值为3‑8％。本申请提供的氮化铝陶瓷板具有2.7‑3.2ppm/℃的较低的热膨胀系数，和大于150W/mk的较高的热传导系数。利用本申请提供的氮化铝陶瓷基板进行芯片的散热，可以在提高芯片的散热性的同时，还能减小基板与芯片之间的热应力。
Aluminum nitride substrate and preparation method thereof
一种氮化铝基板及其制备方法
YU HONGYU (author) / TAN FEIHU (author) / CHEN YUPENG (author) / XIONG ZILONG (author) / XUE WENZHUO (author)
2023-03-03
Patent
Electronic Resource
Chinese
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