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Magnetic tunnel junction (MTJ) and magnetic tunnel junction (MTJ) array
The embodiment of the invention provides a magnetic tunnel junction MTJ and a magnetic tunnel junction MTJ array, and belongs to the technical field of magnetic electronic devices. The magnetic tunnel junction (MTJ) includes a tunnel junction base structure, a bottom electrode layer disposed under the tunnel junction base structure, and an auxiliary layer disposed between the tunnel junction base structure and the bottom electrode layer. The magnetic tunnel junction (MTJ) is configured to apply an auxiliary current to the bottom electrode layer when information is written to the tunnel junction base structure by a write current, the auxiliary current acting on the auxiliary layer to assist the write current in writing information to the tunnel junction base structure. When the tunnel junction base structure is written through a write-in current, an auxiliary current is introduced into the bottom electrode layer and acts on the auxiliary layer; under the action of the auxiliary current, the auxiliary layer generates the effects of deformation or dielectric effect and the like, and assists the magnetic moment of the free layer to overturn, so that the magnetic anisotropy and the thermal stability during information writing are reduced, and the dynamic power consumption of the magnetic tunnel junction (MTJ) is reduced.
本发明实施例提供一种磁隧道结MTJ和磁隧道结MTJ阵列，属于磁性电子器件技术领域。该磁隧道结MTJ包括隧道结基础结构、在所述隧道结基础结构下方布置的底电极层和在所述隧道结基础结构和所述底电极层之间布置的辅助层。该磁隧道结MTJ被配置为：在通过写入电流将信息写入所述隧道结基础结构时，在所述底电极层施加辅助电流，该辅助电流作用在所述辅助层上，以辅助所述写入电流将信息写入所述隧道结基础结构。在通过写入电流对隧道结基础结构进行写入时，底电极层通入辅助电流，作用在辅助层上；辅助层在辅助电流的作用下，产生形变或介电效应等效果，辅助自由层磁矩发生翻转，进而减小信息写入时的磁各向异性和热稳定性，以减小磁隧道结MTJ的动态功耗。
Magnetic tunnel junction (MTJ) and magnetic tunnel junction (MTJ) array
The embodiment of the invention provides a magnetic tunnel junction MTJ and a magnetic tunnel junction MTJ array, and belongs to the technical field of magnetic electronic devices. The magnetic tunnel junction (MTJ) includes a tunnel junction base structure, a bottom electrode layer disposed under the tunnel junction base structure, and an auxiliary layer disposed between the tunnel junction base structure and the bottom electrode layer. The magnetic tunnel junction (MTJ) is configured to apply an auxiliary current to the bottom electrode layer when information is written to the tunnel junction base structure by a write current, the auxiliary current acting on the auxiliary layer to assist the write current in writing information to the tunnel junction base structure. When the tunnel junction base structure is written through a write-in current, an auxiliary current is introduced into the bottom electrode layer and acts on the auxiliary layer; under the action of the auxiliary current, the auxiliary layer generates the effects of deformation or dielectric effect and the like, and assists the magnetic moment of the free layer to overturn, so that the magnetic anisotropy and the thermal stability during information writing are reduced, and the dynamic power consumption of the magnetic tunnel junction (MTJ) is reduced.
本发明实施例提供一种磁隧道结MTJ和磁隧道结MTJ阵列，属于磁性电子器件技术领域。该磁隧道结MTJ包括隧道结基础结构、在所述隧道结基础结构下方布置的底电极层和在所述隧道结基础结构和所述底电极层之间布置的辅助层。该磁隧道结MTJ被配置为：在通过写入电流将信息写入所述隧道结基础结构时，在所述底电极层施加辅助电流，该辅助电流作用在所述辅助层上，以辅助所述写入电流将信息写入所述隧道结基础结构。在通过写入电流对隧道结基础结构进行写入时，底电极层通入辅助电流，作用在辅助层上；辅助层在辅助电流的作用下，产生形变或介电效应等效果，辅助自由层磁矩发生翻转，进而减小信息写入时的磁各向异性和热稳定性，以减小磁隧道结MTJ的动态功耗。
Magnetic tunnel junction (MTJ) and magnetic tunnel junction (MTJ) array
磁隧道结MTJ和磁隧道结MTJ阵列
WANG LE (author) / WANG HANGTIAN (author) / YIN JIALIANG (author) / ZHANG HONGCHAO (author) / LYU SHUQIN (author) / LIU HONGXI (author) / CAO KAIHUA (author) / WANG GEFEI (author)
2023-07-04
Patent
Electronic Resource
Chinese
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