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Preparation method of tubular indium gallium zinc oxide (In2Ga2ZnO7) fine-grain high-density cracking-free target material
The invention belongs to the technical field of metal oxide target material preparation, and particularly relates to a preparation method of a tubular indium gallium zinc oxide (In2Ga2ZnO7) fine-grain high-density cracking-free target material. The method comprises the steps of material ball milling, granulation, preparation of a tubular target material biscuit through cold isostatic pressing and three-stage sintering. According to the preparation method, a three-stage sintering process is used, and the indium gallium zinc oxide tubular target material which is high in compactness, fine in grain and free of cracking is prepared by regulating and controlling the target material powder treatment, blank forming and sintering processes. And when the tubular target material is sputtered in the rotating cathode, the utilization rate of the target material is increased from 30-40% to more than 70% compared with that of a plane target material, so that the sputtering efficiency and the utilization rate of the target material are greatly improved, and the industrial utilization value is relatively high.
本发明属于金属氧化物靶材制备技术领域，具体涉及一种管状氧化铟镓锌（In2Ga2ZnO7）细晶高致密无开裂靶材的制备方法。该方法包括物料球磨、造粒、冷等静压制备管状靶材素坯、三阶段烧结。本发明使用了三阶段烧结工艺，通过对靶材粉末处理、坯体成型及烧结过程的调控，制备了高致密度、细晶粒，无开裂的氧化铟镓锌管状靶材。管状靶材在旋转阴极内溅射时，靶材利用率较平面靶材由原本的30～40%提升至70%以上，大大提升了溅射效率及靶材利用率，具有较高的产业利用价值。
Preparation method of tubular indium gallium zinc oxide (In2Ga2ZnO7) fine-grain high-density cracking-free target material
The invention belongs to the technical field of metal oxide target material preparation, and particularly relates to a preparation method of a tubular indium gallium zinc oxide (In2Ga2ZnO7) fine-grain high-density cracking-free target material. The method comprises the steps of material ball milling, granulation, preparation of a tubular target material biscuit through cold isostatic pressing and three-stage sintering. According to the preparation method, a three-stage sintering process is used, and the indium gallium zinc oxide tubular target material which is high in compactness, fine in grain and free of cracking is prepared by regulating and controlling the target material powder treatment, blank forming and sintering processes. And when the tubular target material is sputtered in the rotating cathode, the utilization rate of the target material is increased from 30-40% to more than 70% compared with that of a plane target material, so that the sputtering efficiency and the utilization rate of the target material are greatly improved, and the industrial utilization value is relatively high.
本发明属于金属氧化物靶材制备技术领域，具体涉及一种管状氧化铟镓锌（In2Ga2ZnO7）细晶高致密无开裂靶材的制备方法。该方法包括物料球磨、造粒、冷等静压制备管状靶材素坯、三阶段烧结。本发明使用了三阶段烧结工艺，通过对靶材粉末处理、坯体成型及烧结过程的调控，制备了高致密度、细晶粒，无开裂的氧化铟镓锌管状靶材。管状靶材在旋转阴极内溅射时，靶材利用率较平面靶材由原本的30～40%提升至70%以上，大大提升了溅射效率及靶材利用率，具有较高的产业利用价值。
Preparation method of tubular indium gallium zinc oxide (In2Ga2ZnO7) fine-grain high-density cracking-free target material
一种管状氧化铟镓锌（In2Ga2ZnO7）细晶高致密无开裂靶材的制备方法
CHEN JIE (author) / QI CHAO (author) / SUN BENSHUANG (author) / HE JILIN (author)
2023-04-04
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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