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Preparation method of indium gallium zinc oxide target material
The invention discloses a preparation method of an indium gallium zinc oxide target material, which comprises the following steps: adding indium oxide powder, gallium oxide powder and zinc oxide powder into water, adding a dispersing agent, and stirring to prepare an IGZO pre-mixed solution; adding the IGZO pre-mixed liquid into a ball mill for wet milling to prepare IGZO slurry; the IGZO slurry is sequentially subjected to spray granulation and compression molding, and an IGZO biscuit is prepared; the IGZO biscuit is sequentially subjected to rubber discharging, pre-sintering and high-temperature sintering, and an IGZO target material is prepared; wherein the glue discharging temperature is 500-800 DEG C, and the glue discharging time is longer than or equal to 24 hours; the pre-sintering temperature is 1000-1250 DEG C, and the heat preservation time is 6-12 hours; the high-temperature sintering temperature is 1350-1450 DEG C, and the heat preservation time is 4-20 hours. The pre-sintering process after glue discharging is added, so that the formed IGZO target material has the characteristics of high strength, high density, high flatness, low resistivity and the like.
本发明公开了一种氧化铟镓锌靶材的制备方法，包括：将氧化铟粉末、氧化镓粉末和氧化锌粉末加入水中，并加入分散剂，搅拌制得IGZO前混液；将IGZO前混液加入球磨机中进行湿磨，制得IGZO浆料；将IGZO浆料依次进行喷雾造粒和压制成型，制得IGZO素坯；将IGZO素坯依次进行排胶、预烧结和高温烧结，制得IGZO靶材；其中，排胶温度为500℃～800℃，排胶时间≥24小时；预烧结温度为1000℃～1250℃，保温时间为6～12小时；高温烧结温度为1350℃～1450℃，保温时间为4～20小时。本发明增加了排胶后的预烧结工艺，使成型后的IGZO靶材具有强度高、密度大、平整度高、电阻率低等特点。
Preparation method of indium gallium zinc oxide target material
The invention discloses a preparation method of an indium gallium zinc oxide target material, which comprises the following steps: adding indium oxide powder, gallium oxide powder and zinc oxide powder into water, adding a dispersing agent, and stirring to prepare an IGZO pre-mixed solution; adding the IGZO pre-mixed liquid into a ball mill for wet milling to prepare IGZO slurry; the IGZO slurry is sequentially subjected to spray granulation and compression molding, and an IGZO biscuit is prepared; the IGZO biscuit is sequentially subjected to rubber discharging, pre-sintering and high-temperature sintering, and an IGZO target material is prepared; wherein the glue discharging temperature is 500-800 DEG C, and the glue discharging time is longer than or equal to 24 hours; the pre-sintering temperature is 1000-1250 DEG C, and the heat preservation time is 6-12 hours; the high-temperature sintering temperature is 1350-1450 DEG C, and the heat preservation time is 4-20 hours. The pre-sintering process after glue discharging is added, so that the formed IGZO target material has the characteristics of high strength, high density, high flatness, low resistivity and the like.
本发明公开了一种氧化铟镓锌靶材的制备方法，包括：将氧化铟粉末、氧化镓粉末和氧化锌粉末加入水中，并加入分散剂，搅拌制得IGZO前混液；将IGZO前混液加入球磨机中进行湿磨，制得IGZO浆料；将IGZO浆料依次进行喷雾造粒和压制成型，制得IGZO素坯；将IGZO素坯依次进行排胶、预烧结和高温烧结，制得IGZO靶材；其中，排胶温度为500℃～800℃，排胶时间≥24小时；预烧结温度为1000℃～1250℃，保温时间为6～12小时；高温烧结温度为1350℃～1450℃，保温时间为4～20小时。本发明增加了排胶后的预烧结工艺，使成型后的IGZO靶材具有强度高、密度大、平整度高、电阻率低等特点。
Preparation method of indium gallium zinc oxide target material
一种氧化铟镓锌靶材的制备方法
ZUO NINGWEI (author) / YANG JIE (author)
2022-12-23
Patent
Electronic Resource
Chinese
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