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Preparation method of high-through-flow ZnO piezoresistor tablet
The invention discloses a preparation method of a high-through-flow ZnO piezoresistor tablet, and belongs to the field of piezoresistors. The preparation method comprises the following steps: preparing raw materials of the piezoresistor tablet, taking the raw materials according to the proportion, carrying out ball-milling mixing and spray-drying pressing to obtain a quadrangular blank, and then carrying out sintering and grinding processes to obtain a tablet finished product. Compared with a traditional cylindrical blank body, the side face is polished through an existing grinding piece process, the porosity of the piezoresistor is reduced, uniformity is improved, meanwhile, the problems that the upper portion of the same cylinder is thinner than the lower portion of the same cylinder and the uniformity is poor when the high-resistance layer and the insulating layer are coated are solved, and the uniformity of the high-resistance layer is greatly improved; the repairing layer is coated to replace a traditional high-resistance layer working procedure, oxides such as silicon oxide and antimony oxide are removed from a repairing layer system, generation of spinel substances such as willemite and zinc antimonate generated in the sintering process is reduced, side crystal grains and crystal boundaries can be fully repaired through a repairing medium, and the side flashover phenomenon is restrained.
本发明公开了一种高通流ZnO压敏电阻压片的制备方法，属于压敏电阻领域。本发明制备方法包括压敏电阻压片的原料配制，按照配比取各原料经过球磨混合、喷雾干燥压制成四棱柱胚体，然后进行烧结、磨片工艺得到压片成品。本发明压制成型工艺相较于传统圆柱胚体，使用现有磨片工艺打磨侧面，降低压敏电阻气孔率，均匀性增加，同时解决在涂覆高阻层与绝缘层时同一柱体上部比下部薄均匀性差的问题，大幅提高高阻层的均匀度；涂覆修复层代替传统高阻层工序，修复层体系中去掉了氧化硅、氧化锑等氧化物，降低了烧结过程中生成硅锌矿、锑酸锌等尖晶石物质的生成，使修复介质可以充分修复侧面晶粒与晶界，抑制了侧面闪络现象。
Preparation method of high-through-flow ZnO piezoresistor tablet
The invention discloses a preparation method of a high-through-flow ZnO piezoresistor tablet, and belongs to the field of piezoresistors. The preparation method comprises the following steps: preparing raw materials of the piezoresistor tablet, taking the raw materials according to the proportion, carrying out ball-milling mixing and spray-drying pressing to obtain a quadrangular blank, and then carrying out sintering and grinding processes to obtain a tablet finished product. Compared with a traditional cylindrical blank body, the side face is polished through an existing grinding piece process, the porosity of the piezoresistor is reduced, uniformity is improved, meanwhile, the problems that the upper portion of the same cylinder is thinner than the lower portion of the same cylinder and the uniformity is poor when the high-resistance layer and the insulating layer are coated are solved, and the uniformity of the high-resistance layer is greatly improved; the repairing layer is coated to replace a traditional high-resistance layer working procedure, oxides such as silicon oxide and antimony oxide are removed from a repairing layer system, generation of spinel substances such as willemite and zinc antimonate generated in the sintering process is reduced, side crystal grains and crystal boundaries can be fully repaired through a repairing medium, and the side flashover phenomenon is restrained.
本发明公开了一种高通流ZnO压敏电阻压片的制备方法，属于压敏电阻领域。本发明制备方法包括压敏电阻压片的原料配制，按照配比取各原料经过球磨混合、喷雾干燥压制成四棱柱胚体，然后进行烧结、磨片工艺得到压片成品。本发明压制成型工艺相较于传统圆柱胚体，使用现有磨片工艺打磨侧面，降低压敏电阻气孔率，均匀性增加，同时解决在涂覆高阻层与绝缘层时同一柱体上部比下部薄均匀性差的问题，大幅提高高阻层的均匀度；涂覆修复层代替传统高阻层工序，修复层体系中去掉了氧化硅、氧化锑等氧化物，降低了烧结过程中生成硅锌矿、锑酸锌等尖晶石物质的生成，使修复介质可以充分修复侧面晶粒与晶界，抑制了侧面闪络现象。
Preparation method of high-through-flow ZnO piezoresistor tablet
一种高通流ZnO压敏电阻压片的制备方法
MENG PENGFEI (author) / YIN YUE (author) / HE JINLIANG (author) / HU JUN (author) / GUO JINGKE (author)
2024-06-14
Patent
Electronic Resource
Chinese
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