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SiC semiconductor material for plasma ignition, preparation method and sparking plug
The invention relates to the field of conductor material preparation, and relates to a SiC semiconductor material for plasma ignition, a preparation method and an ignition plug, the material comprises the following components by mass: 30-70% of SiC powder, 10-20% of ZrO2 powder, 10-30% of mullite powder and 10-30% of composite sintering aid powder; lu2O3, Yb2O3, Y2O3 and La2O3 are added into the composite sintering aid powder, so that the material can resist the high temperature of 1500-1600 DEG C and has good ion erosion resistance; zrO2 is added, so that the mechanical property and the reliability of the material are improved; by adding Lu2O3, the electrical property of the material can be improved; due to the high-volume-fraction SiC, the semiconductor ignition plug prepared from the material has low ignition voltage and high spark energy; the open porosity of the material is extremely low, and the spark corrosion resistance is improved; certain closed pores are formed in the material, so that the thermal shock resistance can be improved. The sparking plug solves the problems of poor high temperature resistance, insufficient electric spark corrosion resistance and insufficient thermal shock resistance of the sparking plug prepared from a SiC semiconductor material.
本发明涉及导体材料制备领域,涉及一种等离子点火用SiC半导体材料、制备方法及电嘴,该材料按质量比30~70%的SiC粉末、10~20%的ZrO2粉末、10~30%的莫来石粉末和10~30%的复合烧结助剂粉末;通过在复合烧结助剂粉末中添加Lu2O3、Yb2O3、Y2O3和La2O3,使材料可耐受1500~1600℃的高温,且具有良好的抗离子侵蚀的能力;结合ZrO2的添加提高材料的力学性能和可靠性;添加Lu2O3可改善材料的电性能;高体积分数的SiC,使得利用该材料制备的半导体电嘴具有低的发火电压,高的火花能量;材料开气孔率极低,提升耐火花腐蚀性;材料内部具有一定的闭气孔,可提高抗热冲击性能。解决SiC半导体材料制备的电嘴存在耐高温性能差、耐电火花腐蚀性能不足、以及耐热冲击性能不足的问题。
SiC semiconductor material for plasma ignition, preparation method and sparking plug
The invention relates to the field of conductor material preparation, and relates to a SiC semiconductor material for plasma ignition, a preparation method and an ignition plug, the material comprises the following components by mass: 30-70% of SiC powder, 10-20% of ZrO2 powder, 10-30% of mullite powder and 10-30% of composite sintering aid powder; lu2O3, Yb2O3, Y2O3 and La2O3 are added into the composite sintering aid powder, so that the material can resist the high temperature of 1500-1600 DEG C and has good ion erosion resistance; zrO2 is added, so that the mechanical property and the reliability of the material are improved; by adding Lu2O3, the electrical property of the material can be improved; due to the high-volume-fraction SiC, the semiconductor ignition plug prepared from the material has low ignition voltage and high spark energy; the open porosity of the material is extremely low, and the spark corrosion resistance is improved; certain closed pores are formed in the material, so that the thermal shock resistance can be improved. The sparking plug solves the problems of poor high temperature resistance, insufficient electric spark corrosion resistance and insufficient thermal shock resistance of the sparking plug prepared from a SiC semiconductor material.
本发明涉及导体材料制备领域,涉及一种等离子点火用SiC半导体材料、制备方法及电嘴,该材料按质量比30~70%的SiC粉末、10~20%的ZrO2粉末、10~30%的莫来石粉末和10~30%的复合烧结助剂粉末;通过在复合烧结助剂粉末中添加Lu2O3、Yb2O3、Y2O3和La2O3,使材料可耐受1500~1600℃的高温,且具有良好的抗离子侵蚀的能力;结合ZrO2的添加提高材料的力学性能和可靠性;添加Lu2O3可改善材料的电性能;高体积分数的SiC,使得利用该材料制备的半导体电嘴具有低的发火电压,高的火花能量;材料开气孔率极低,提升耐火花腐蚀性;材料内部具有一定的闭气孔,可提高抗热冲击性能。解决SiC半导体材料制备的电嘴存在耐高温性能差、耐电火花腐蚀性能不足、以及耐热冲击性能不足的问题。
SiC semiconductor material for plasma ignition, preparation method and sparking plug
一种等离子点火用SiC半导体材料、制备方法及电嘴
WANG BO (author) / NIU YAO (author) / YU YANG (author) / XU JIAOQIAN (author) / ZHOU XIAONAN (author) / YANG JIANFENG (author) / SHI ZHONGQI (author) / WANG JIPING (author)
2023-09-01
Patent
Electronic Resource
Chinese
Sparking advanced ceramics: Spark plasma sintering
British Library Online Contents | 2010
Review of experiments on ignition of inflammable gases by frictional sparking
Engineering Index Backfile | 1956
|Review of experiments on ignition of inflammable gases by frictional sparking
Engineering Index Backfile | 1955
|