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Silicon carbide ceramic connecting piece as well as preparation method and application thereof
The invention belongs to the technical field of ceramic welding, and discloses a silicon carbide connecting piece and a preparation method and application thereof, and the method comprises the following steps: mixing SiC, Si3N4 and glass powder CAMZS to prepare a welding flux; the two silicon carbide to-be-welded areas are coated with welding flux, and a to-be-connected assembly is obtained; the method comprises the following steps: putting a to-be-connected assembly into a heating furnace, mechanically pressurizing the to-be-connected assembly in a nitrogen atmosphere, welding at 1500-1650 DEG C, and cooling to obtain the silicon carbide connecting piece. The thickness of a connecting layer of the connecting piece is 10-60 microns, the shear strength of the connecting piece at the room temperature is 60-100 MPa, the shear strength of the connecting piece at the 1000 DEG C inert atmosphere is 70-110 MPa, the shear strength of the connecting layer at the room temperature after three times of 800 DEG C water quenching is 40-70 MPa, and the silicon carbide connecting piece can be applied to the fields of heat exchange, aviation, spaceflight or military industry.
本发明属于陶瓷焊接技术领域，公开了一种碳化硅连接件及其制备方法和应用，该方法是将SiC、Si3N4与玻璃粉体CAMZS混合制备焊料；将焊剂涂敷于两个碳化硅的待焊接区域，得到待连接组件；将待连接组件放入加热炉中，在氮气气氛中，对待连接组件进行机械加压，在1500～1650℃焊接处理，冷却后得到碳化硅连接件。所述连接件的连接层厚度为10～60μm，连接件在室温下的剪切强度为60～100MPa，在1000℃惰性气氛下的剪切强度为70～110MPa，经过3次800℃的水淬后连接层的室温剪切强度为40～70MPa，该碳化硅连接件可应用在换热、航空、航天或军工领域。
Silicon carbide ceramic connecting piece as well as preparation method and application thereof
The invention belongs to the technical field of ceramic welding, and discloses a silicon carbide connecting piece and a preparation method and application thereof, and the method comprises the following steps: mixing SiC, Si3N4 and glass powder CAMZS to prepare a welding flux; the two silicon carbide to-be-welded areas are coated with welding flux, and a to-be-connected assembly is obtained; the method comprises the following steps: putting a to-be-connected assembly into a heating furnace, mechanically pressurizing the to-be-connected assembly in a nitrogen atmosphere, welding at 1500-1650 DEG C, and cooling to obtain the silicon carbide connecting piece. The thickness of a connecting layer of the connecting piece is 10-60 microns, the shear strength of the connecting piece at the room temperature is 60-100 MPa, the shear strength of the connecting piece at the 1000 DEG C inert atmosphere is 70-110 MPa, the shear strength of the connecting layer at the room temperature after three times of 800 DEG C water quenching is 40-70 MPa, and the silicon carbide connecting piece can be applied to the fields of heat exchange, aviation, spaceflight or military industry.
本发明属于陶瓷焊接技术领域，公开了一种碳化硅连接件及其制备方法和应用，该方法是将SiC、Si3N4与玻璃粉体CAMZS混合制备焊料；将焊剂涂敷于两个碳化硅的待焊接区域，得到待连接组件；将待连接组件放入加热炉中，在氮气气氛中，对待连接组件进行机械加压，在1500～1650℃焊接处理，冷却后得到碳化硅连接件。所述连接件的连接层厚度为10～60μm，连接件在室温下的剪切强度为60～100MPa，在1000℃惰性气氛下的剪切强度为70～110MPa，经过3次800℃的水淬后连接层的室温剪切强度为40～70MPa，该碳化硅连接件可应用在换热、航空、航天或军工领域。
Silicon carbide ceramic connecting piece as well as preparation method and application thereof
一种碳化硅陶瓷连接件及其制备方法和应用
WU JINYUAN (author) / ZHAN CHUANGTIAN (author) / GUO WEIMING (author) / HE SHENGJIN (author) / LIN HUATAI (author)
2023-10-24
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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