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Silicon nitride sintered body, wear-resistant member, and method for producing silicon nitride sintered body
A silicon nitride sintered body according to an embodiment of the present invention comprises silicon nitride crystal particles and a grain boundary phase, and is characterized in that two or more peaks are detected in the ranges of 780 cm <-1 > to 810 cm <-1 > and 1340 cm <-1 > to 1370 cm <-1 > when Raman spectroscopy is performed in a 20 [mu] m * 20 [mu] m region in a central cross-section of the silicon nitride sintered body. In the present invention, 4 to 6 peaks are detected in the range of 170 cm <-1 > to 190 cm <-1 >, 607 cm <-1 > to 627 cm <-1 >, 720 cm <-1 > to 740 cm <-1 >, and 924 cm <-1 > to 944 cm <-1 >.
实施方式的氮化硅烧结体的特征在于，其具备氮化硅结晶粒子及晶界相，在对上述氮化硅烧结体的中心截面中的20μm×20μm的区域进行拉曼光谱分析的情况下，在780cm‑1～810cm‑1及1340cm‑1～1370cm‑1的范围内检测到2个以上的峰，在170cm‑1～190cm‑1、607cm‑1～627cm‑1、720cm‑1～740cm‑1、及924cm‑1～944cm‑1的范围内检测到4个以上且6个以下的峰。
Silicon nitride sintered body, wear-resistant member, and method for producing silicon nitride sintered body
A silicon nitride sintered body according to an embodiment of the present invention comprises silicon nitride crystal particles and a grain boundary phase, and is characterized in that two or more peaks are detected in the ranges of 780 cm <-1 > to 810 cm <-1 > and 1340 cm <-1 > to 1370 cm <-1 > when Raman spectroscopy is performed in a 20 [mu] m * 20 [mu] m region in a central cross-section of the silicon nitride sintered body. In the present invention, 4 to 6 peaks are detected in the range of 170 cm <-1 > to 190 cm <-1 >, 607 cm <-1 > to 627 cm <-1 >, 720 cm <-1 > to 740 cm <-1 >, and 924 cm <-1 > to 944 cm <-1 >.
实施方式的氮化硅烧结体的特征在于，其具备氮化硅结晶粒子及晶界相，在对上述氮化硅烧结体的中心截面中的20μm×20μm的区域进行拉曼光谱分析的情况下，在780cm‑1～810cm‑1及1340cm‑1～1370cm‑1的范围内检测到2个以上的峰，在170cm‑1～190cm‑1、607cm‑1～627cm‑1、720cm‑1～740cm‑1、及924cm‑1～944cm‑1的范围内检测到4个以上且6个以下的峰。
Silicon nitride sintered body, wear-resistant member, and method for producing silicon nitride sintered body
氮化硅烧结体、耐磨性构件及氮化硅烧结体的制造方法
OKUBO KAZUYA (author)
2023-10-27
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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